Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V Enhancement Mode, 8-Pin TO-263 Package SQM40022EM_GE3

Vishay Siliconix SQM40022EM_GE3 is a high-performance TrenchFET N-Channel MOSFET designed for demanding power management applications. With a maximum continuous drain current of 150 A and a maximum drain-source voltage of 40 V, it supports high current loads with efficient switching capabilities.

This device uses enhancement mode channel operation and is housed in a compact 8-pin TO-263 surface mount package, which offers low thermal resistance for improved heat dissipation. The MOSFET features a low maximum drain-source resistance of 3 milliohms, ensuring minimal conduction losses in power circuits.

It delivers a maximum power dissipation of 150 W, suitable for high-power industrial, automotive, and electronic control systems. The operating temperature range from -55°C to 175°C allows deployment in harsh environments. This MOSFET complies with the automotive standard AEC-Q101, making it fit for automotive-grade applications.

The typical gate charge of 106 nC at specified voltages supports fast switching speeds, and the gate-source voltage maximum of 20 V aids in device robustness during operation. With compact dimensions of 10.67 mm length, 4.83 mm width, and 11.3 mm height, it fits well in densely packed electronic assemblies.

Common use cases include power supply circuits, motor drivers, battery management, and industrial automation systems where high current handling is critical. This MOSFET is produced in Taiwan, Province of China, ensuring international quality standards.

Designed with enhancement mode operation for efficient switching performance. Equipped with an 8-pin TO-263 surface mount package for versatile mounting. Offers a low maximum drain-source resistance of 3 milliohms for minimal power loss.

Can dissipate up to 150 W of power providing reliable thermal management. Operates within a wide temperature range from -55°C to 175°C. Includes automotive industry AEC-Q101 qualification ensuring high reliability. Typical gate charge is 106 nC at Vgs, allowing fast switching capabilities.

Maximum gate-source voltage rating of 20 V secures gate protection. Compact dimensions measuring 10.67 mm length, 4.83 mm width, and 11.3 mm height. Explore further Vishay Siliconix MOSFET components in EnvMart's Electronics & Electricals section for industrial and commercial applications.