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Vishay Siliconix TrenchFET Type P-Channel MOSFET 3.6 A 40 V Enhancement 3-Pin SOT-23 Si2319DDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | Si2319DDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 12.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode with TrenchFET technology ensures high efficiency.
- Low maximum drain-source resistance of 100 milliohms reduces conduction losses.
- Operates reliably within the temperature range of -55°C to 150°C.
- Capable of dissipating up to 1.7 watts of power.
- Typical gate charge is 12.5 nanocoulombs at Vgs, enabling fast switching.
- Maximum gate-source voltage rating is 20 V, permitting safe operation.
- Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height support surface mount assembly.
- Lead (Pb) free and halogen free construction suitable for environmentally conscious designs.
Product Description
Vishay Siliconix Si2319DDS-T1-GE3 is a surface mount TrenchFET type P-channel MOSFET designed for power-sensitive semiconductor applications. It delivers a maximum continuous drain current of 3.6 A and supports a drain-source voltage of 40 V. Built with enhancement mode technology, this MOSFET offers low Rds(on) of 100 milliohms, minimizing power losses during conduction and switching.
Operating temperature ranges from -55°C to 150°C ensure reliable performance in diverse industrial and commercial electronics environments. The device features a typical gate charge of 12.5 nC at Vgs, facilitating fast switching speeds critical for efficient power management.
Its compact 3-pin SOT-23 package with dimensions of 3.04 mm (length), 1.4 mm (width), and 1.02 mm (height) enables high-density PCB layouts and surface mounting. The MOSFET construction is lead-free and halogen-free, aligning with environmental standards.
This Vishay MOSFET is optimized for applications requiring efficient switching with low conduction losses such as battery switches, load switching, and motor drive control systems in industrial, electronic component, and power management domains.
Enhancement mode P-channel MOSFET with low on-resistance. Operates in wide temperature ranges suitable for industrial environments. Supports 3.6 A continuous current and 1.7 W maximum power dissipation. Compact SOT-23 surface mount package improves installation versatility.
Lead and halogen free compliance for greener electronics manufacturing.
Made in China, this Vishay Siliconix power MOSFET is a robust choice for advanced semiconductor designs. For more options and technical details, explore our Electronics & Electricals categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Si2319DDS-T1-GE3 is 3.6 A.
This MOSFET supports a maximum drain-source voltage of 40 V.
It can dissipate up to 1.7 watts of power.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge at Vgs is 12.5 nanocoulombs.
This model operates reliably within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating is 20 V, allowing for safe operation.
It features lead-free and halogen-free construction, making it suitable for environmentally conscious designs.
The maximum drain-source resistance (Rds(on)) is 100 milliohms.
This model supports surface mount assembly.
It is optimized for applications requiring efficient switching with low conduction losses, such as battery switches and load switching.
The channel mode of this device is enhancement mode.
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