$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay Siliconix Dual TrenchFET 2 N-Channel Power MOSFET, 30 A, 30 V, Enhancement Mode, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay Siliconix |
| Height | 0.75mm |
| Length | 3mm |
| Model | SiZ348DT-T1-GE3 |
| Width | 3mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAIR 3 x 3 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 16.7W |
| Typical Gate Charge Qg @ Vgs | 12.1nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
Key Features
- Maximum continuous drain current of 30 amperes for robust current handling.
- Maximum drain-source voltage rating of 30 volts suitable for moderate voltage power circuits.
- Low drain-source resistance of 10 milliohms ensures efficient switching performance.
- Dual transistor configuration optimized for 50% duty cycle applications.
- Compact PowerPAIR 3 x 3 package with 8 pins designed for surface mounting.
- Enhanced channel mode with typical gate charge of 12.1 nanocoulombs for fast switching.
- Wide operating temperature range from -55°C to +150°C supports diverse environments.
- Maximum power dissipation rating of 16.7 watts provides high reliability in thermal management.
Product Description
Vishay Siliconix SiZ348DT-T1-GE3 is a Dual TrenchFET® Gen IV power MOSFET designed for high-efficiency power switching in electronic circuits. This device integrates two N-channel transistors in an optimized PowerPAIR 3 x 3 package, enabling high performance in space-constrained applications.
With a maximum continuous drain current of 30 amperes and a maximum drain-source voltage of 30 volts, it is suitable for moderate voltage power management tasks. The low maximum drain-source resistance (RDS(on)) of 10 milliohms reduces conduction losses, enhancing overall power efficiency.
The Dual transistor configuration is optimized for 50% duty cycle operation, making it ideal for synchronous rectification and complementary half-bridge circuits. The typical gate charge (Qg) of 12.1 nanocoulombs enables fast switching, thus improving system speed and reducing switching losses.
The device is housed in a compact 8-pin surface-mount PowerPAIR package measuring 3 mm x 3 mm with a low profile height of 0.75 mm, suitable for high-density PCB layouts. It operates reliably over a wide temperature range from -55°C to +150°C, providing robustness in harsh industrial and automotive environments.
This component is widely used in power supplies, DC-DC converters, motor control circuits, and other applications demanding efficient power switching with enhanced thermal and electrical performance characteristics.
Maximum continuous drain current of 30 amperes. Maximum drain-source voltage of 30 volts. Low drain-source resistance of 10 milliohms. Dual transistor configuration optimized for 50% duty cycle. Compact PowerPAIR 3 x 3 surface-mount package.
Typical gate charge of 12.1 nanocoulombs for fast switching. Operating temperature range from -55°C to +150°C. Maximum power dissipation of 16.7 watts. Gate-source voltage range of -16 to +20 volts. Forward voltage drop of 1.2 volts.
This Vishay Siliconix Power MOSFET is a reliable choice for industrial, automotive, and consumer electronics requiring efficient power management and switching. Explore our comprehensive range of discrete semiconductor components and industrial electronic parts at EnvMart for your application needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the SiZ348DT-T1-GE3 is 30 amperes.
It has a maximum drain-source voltage rating of 30 volts, suitable for moderate voltage power circuits.
The maximum drain-source resistance (RDS(on)) is 10 milliohms, which ensures efficient switching performance.
The typical gate charge (Qg) is 12.1 nanocoulombs, enabling fast switching capabilities.
It operates reliably over a wide temperature range from -55°C to +150°C.
This model is housed in a compact 8-pin PowerPAIR 3 x 3 package designed for surface mounting.
The maximum power dissipation rating for this device is 16.7 watts.
This power MOSFET has a pin count of 8.
The dual transistor configuration is optimized for 50% duty cycle applications, making it suitable for synchronous rectification and complementary half-bridge circuits.
The forward voltage drop is 1.2 volts.
The channel type of this unit is N-channel, designed for enhancement mode operation.
The height of the PowerPAIR package is 0.75 mm.
Related Products
Other Products from this brand
$23.16
$20.22
-12.7%
New
Recently Viewed Products
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent