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Vishay Siliconix TrenchFET N-Channel MOSFET 75 A 40 V Enhancement Mode Surface Mount SO-8 SQJA76EP-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SQJA76EP-T1_GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 66W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET is optimized for high efficiency power switching and conversion.
- It supports maximum continuous drain current of 75 amperes.
- The device features a low maximum drain-source resistance of 5 milliohms.
- Designed with enhancement mode channel operation and maximum gate-source voltage of 20 volts.
- It dissipates maximum power of 66 watts allowing high power handling.
- Operational temperature ranges from -55°C to 175°C ensuring broad application suitability.
- Typical gate charge is 66 nC at rated gate voltage, allowing fast switching.
- Meets automotive quality standard AEC-Q101, suitable for automotive and industrial applications.
Product Description
The Vishay Siliconix SQJA76EP-T1_GE3 TrenchFET N-Channel MOSFET is engineered for demanding power electronic applications requiring high current handling and efficient switching. This device supports a maximum continuous drain current of 75 A at a maximum drain-source voltage of 40 V, making it ideal for automotive, industrial, and high-performance power management circuits.
Packaged in a compact SO-8 surface mount form factor, it measures 5.99 mm in length, 5 mm in width, and 1.07 mm in height, enabling dense PCB layouts. The MOSFET features a low on-resistance of 5 milliohms, supporting minimal conduction losses and increased efficiency.
Its enhancement mode channel and maximum gate-source voltage rating of 20 V allow precise gate control. With a forward voltage of 1.2 V and a maximum power dissipation rating of 66 W, this MOSFET supports robust operation under high electrical and thermal stress.
The typical gate charge of 66 nC at the given gate voltage leads to fast switching speeds, suitable for DC-DC converters, motor control systems, and power supplies. The device operates reliably across a wide temperature range from -55°C to 175°C, fulfilling automotive industry requirements with AEC-Q101 certification.
This MOSFET offers 75 A continuous current at 40 V drain-source voltage. It includes a low on-resistance of 5 mΩ optimized for power efficiency. Surface mount SO-8 package allows compact circuit designs. Temperature capabilities from -55°C to 175°C ensure broad usability.
Typical gate charge of 66 nC facilitates rapid switching. Meets AEC-Q101 automotive standard for quality and reliability. Maximum power dissipation is 66 W, supporting demanding applications. Manufactured in China employing advanced TrenchFET technology.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
It can handle a maximum drain-source voltage of 40 V.
The maximum drain-source resistance is 5 milliohms.
It has a maximum power dissipation rating of 66 W.
The typical gate charge is 66 nC at the rated gate voltage.
The SO-8 package measures 5.99 mm in length, 5 mm in width, and 1.07 mm in height.
It operates within a temperature range of -55°C to 175°C.
This model meets the automotive quality standard AEC-Q101.
It uses an enhancement mode channel type.
The maximum gate-source voltage is rated at 20 V.
It is suitable for automotive, industrial, and high-performance power management circuits.
This device is manufactured in China.
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