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Vishay Siliconix N-Channel MOSFET PowerPAK 1212 100 V, 14.2 A, 24W Pd, SiS110DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.07mm |
| Length | 3.15mm |
| Model | SiS110DN-T1-GE3 |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | SiS110DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14.2A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 24W |
| Typical Gate Charge Qg @ Vgs | 8.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for surface-mount applications in compact electronic assemblies.
- Offers 100 V maximum drain-source voltage for high-voltage switching.
- Supports continuous drain current of 14.2 A for substantial load capacity.
- Features low on-resistance of 70 mΩ to reduce conduction losses.
- Typical gate charge of 8.5 nC ensures efficient and responsive switching.
- Maximum gate-source voltage rating ±20 V for robust gate voltage margins.
- Operates reliably over a wide temperature range from -55°C to 150°C.
- Compact 8-pin PowerPAK 1212 package allows low-profile PCB assembly and good thermal dissipation.
Product Description
Vishay Siliconix SiS110DN-T1-GE3 is an N-Channel MOSFET designed for high-efficiency switching and power management in compact electronics. Packaged in a surface-mount PowerPAK 1212, it balances a 100 V drain-source voltage rating with 14.2 A continuous drain current, providing robust current capacity and high-voltage tolerance.
The device exhibits a low on-resistance of 70 mΩ that minimizes conduction losses, enhancing energy efficiency in power conversion applications. Its typical gate charge of 8.5 nC supports rapid switching transitions with manageable gate drive power requirements. Rated for a maximum gate-source voltage of ±20 V, this MOSFET offers a strong margin for gate control voltages allowing flexibility in circuit design.
The operating temperature span from -55°C to 150°C makes it suitable for environments experiencing harsh temperature variations while maintaining reliable performance. The 8-pin PowerPAK 1212 package facilitates low-profile mounting and effective thermal conduction, contributing to dependable operation and extended device longevity.
Applications for the SiS110DN-T1-GE3 include DC-DC converter switching stages, motor drive low-side switches, synchronous rectification in power supplies, telecom equipment load switching, and battery management systems. Its compliance with RoHS requirements ensures environmentally responsible manufacturing and usage standards.
Surface-mount N-Channel MOSFET for power management. 100 V maximum drain-source voltage for high-voltage switching capability. Continuous drain current rating of 14.2 A suitable for substantial loads. Low on-resistance (70 mΩ) reduces power loss during conduction.
Typical gate charge of 8.5 nC for responsive switching. Maximum gate-source voltage rating ±20 V for gate voltage robustness. Thermal operating range from -55°C to 150°C for wide application environments. Compact PowerPAK 1212 package with 8-pin configuration.
RoHS compliant design supporting environmental standards. Suited for industrial, automotive, telecommunications, and battery management applications. Explore Vishay Siliconix products and other MOSFETs on EnvMart for a wide selection of power semiconductor solutions.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 100 V, making it suitable for high-voltage switching applications.
It supports a continuous drain current of 14.2 A, providing substantial load capacity for various applications.
The on-resistance is 70 mΩ, which helps to reduce conduction losses during operation.
The typical gate charge is 8.5 nC, ensuring efficient and responsive switching performance.
The maximum gate-source voltage rating is ±20 V, providing robust margins for gate control.
It operates reliably over a temperature range from -55°C to 150°C, suitable for harsh environments.
This model comes in a compact 8-pin PowerPAK 1212 package, designed for surface-mount applications.
The maximum power dissipation is rated at 24 W, allowing for effective thermal management in applications.
The height is 1.07 mm, and the width is 3.15 mm, facilitating low-profile PCB assembly.
Yes, this MOSFET complies with RoHS requirements, ensuring environmentally responsible manufacturing.
It is suitable for applications such as DC-DC converter switching, motor drive low-side switches, and battery management systems.
The channel type is N, specifically designed for enhancement mode operation.
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