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| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SQJ431AEP-T1_GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 760mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Vishay Siliconix SQJ431AEP-T1_GE3 is a high-performance TrenchFET P-channel MOSFET tailored for industrial and automotive applications requiring efficient power management and switching capabilities. Packaged in an 8-pin SO-8 surface-mount configuration, this device supports a maximum continuous drain current of 9.4 A and withstands a maximum drain-source voltage of 200 V. The enhancement-mode design ensures excellent switching speed and reduced power losses, making it ideal for power management circuits, DC-DC converters, and load switching applications.
This MOSFET maintains operational integrity across a wide temperature range from -55°C to 175°C, meeting stringent automotive quality standards including AEC-Q101. With a maximum power dissipation rating of 68 W, it is capable of handling substantial power levels without compromising reliability. The typical gate charge of 55 nC at the specified gate voltage enables efficient gate drive control, and its maximum gate-source voltage rating of 20 V ensures robust operation under diverse electrical conditions.
Its compact size with dimensions of approximately 5.99 mm length, 5 mm width, and 1.07 mm height aids in space-constrained PCB designs. The device's low maximum drain-source resistance of 760 mΩ optimizes conduction efficiency, minimizing thermal losses during operation.
Features an 8-pin SO-8 package suitable for compact PCB layouts. Utilizes enhancement mode operation for efficient switching performance. Has a low drain-source resistance of 760 mΩ to minimize conduction losses. Supports a maximum power dissipation of 68 W to handle substantial power loads.
Operates reliably within a temperature range from -55°C to 175°C. Complies with automotive standard AEC-Q101, ensuring quality and reliability. Typical gate charge of 55 nC at Vgs for optimized switching. Maximum gate-source voltage rating of 20 V for robust gate control.
Compact dimensions with 5.99 mm length, 5 mm width, and 1.07 mm height. Manufactured in China with premium Vishay Siliconix quality assurance. Explore a broad range of Vishay Siliconix MOSFETs at EnvMart to find components that meet your industrial and automotive design needs.
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