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Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3

Category MOSFET Brand Vishay Siliconix Condition New

Specifications

Country of Origin China
Brand Vishay Siliconix
Height 1.07mm
Length 5.99mm
Model SQJ431AEP-T1_GE3
Width 5mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type SO-8
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 9.4A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 760mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 68W
Typical Gate Charge Qg @ Vgs 55nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Features an 8-pin SO-8 package suitable for compact PCB layouts.
  • Utilizes enhancement mode operation for efficient switching performance.
  • Has a low drain-source resistance of 760 mΩ to minimize conduction losses.
  • Supports a maximum power dissipation of 68 W to handle substantial power loads.
  • Operates reliably within a temperature range from -55°C to 175°C.
  • Complies with automotive standard AEC-Q101, ensuring quality and reliability.
  • Typical gate charge of 55 nC at Vgs for optimized switching.
  • Maximum gate-source voltage rating of 20 V for robust gate control.

Product Description

Vishay Siliconix SQJ431AEP-T1_GE3 is a high-performance TrenchFET P-channel MOSFET tailored for industrial and automotive applications requiring efficient power management and switching capabilities. Packaged in an 8-pin SO-8 surface-mount configuration, this device supports a maximum continuous drain current of 9.4 A and withstands a maximum drain-source voltage of 200 V. The enhancement-mode design ensures excellent switching speed and reduced power losses, making it ideal for power management circuits, DC-DC converters, and load switching applications.

This MOSFET maintains operational integrity across a wide temperature range from -55°C to 175°C, meeting stringent automotive quality standards including AEC-Q101. With a maximum power dissipation rating of 68 W, it is capable of handling substantial power levels without compromising reliability. The typical gate charge of 55 nC at the specified gate voltage enables efficient gate drive control, and its maximum gate-source voltage rating of 20 V ensures robust operation under diverse electrical conditions.

Its compact size with dimensions of approximately 5.99 mm length, 5 mm width, and 1.07 mm height aids in space-constrained PCB designs. The device's low maximum drain-source resistance of 760 mΩ optimizes conduction efficiency, minimizing thermal losses during operation.

Features an 8-pin SO-8 package suitable for compact PCB layouts. Utilizes enhancement mode operation for efficient switching performance. Has a low drain-source resistance of 760 mΩ to minimize conduction losses. Supports a maximum power dissipation of 68 W to handle substantial power loads.

Operates reliably within a temperature range from -55°C to 175°C. Complies with automotive standard AEC-Q101, ensuring quality and reliability. Typical gate charge of 55 nC at Vgs for optimized switching. Maximum gate-source voltage rating of 20 V for robust gate control.

Compact dimensions with 5.99 mm length, 5 mm width, and 1.07 mm height. Manufactured in China with premium Vishay Siliconix quality assurance. Explore a broad range of Vishay Siliconix MOSFETs at EnvMart to find components that meet your industrial and automotive design needs.

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 9.4 A.

This MOSFET can withstand a maximum drain-source voltage of 200 V.

It supports a maximum power dissipation of 68 W, allowing it to handle substantial power loads.

The dimensions of this model are approximately 5.99 mm in length, 5 mm in width, and 1.07 mm in height.

The typical gate charge at the specified gate voltage is 55 nC.

It has a maximum gate-source voltage rating of 20 V.

This model operates reliably within a temperature range from -55°C to 175°C.

It is packaged in an 8-pin SO-8 configuration, suitable for compact PCB layouts.

It complies with the automotive standard AEC-Q101, ensuring quality and reliability.

The maximum drain-source resistance is 760 mΩ, which helps minimize conduction losses.

This unit features a P-channel design, utilizing enhancement mode operation.

Yes, it is designed for industrial and automotive applications requiring efficient power management and switching capabilities.

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