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| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SQJ872EP-T1_GE3 |
| Width | 5mm |
| Mount Type | PCB |
| Series | SQJ872EP |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24.5A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 0.0395Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 55W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Vishay Siliconix SQJ872EP-T1_GE3 is a high-performance N-channel enhancement mode MOSFET intended for demanding industrial and automotive applications that require efficient power switching and conversion.
This device supports a maximum continuous drain current of 24.5 A and withstands up to 150 V drain source voltage, offering robust operation under high current and voltage conditions.
The MOSFET features a low drain source resistance of 0.0395 Ω which minimizes conduction losses, thus enhancing energy efficiency in switching systems. Its gate charge of 14 nC permits fast and efficient switching control, while the power dissipation capability of 55 W ensures the device can handle continuous thermal loads without degradation.
Designed for extreme operating environments, it functions reliably from -55 °C up to 175 °C, satisfying stringent industrial and automotive thermal requirements. It is tested and qualified to the automotive industry standard AEC-Q101, making it suitable for automotive power stage applications.
Its compact SO-8L package facilitates easy and secure PCB mounting in dense circuit layouts, making it ideal for space-sensitive electronics assemblies. The gate voltage tolerance of ±20 V affords flexibility in gate drive design, improving system robustness.
Maximum continuous drain current 24.5 A supporting high load current. Maximum drain source voltage of 150 V for robust switching margins. Low on-resistance 0.0395 Ω reduces conduction losses. Gate charge of 14 nC for efficient switching.
Power dissipation of 55 W allows sustained thermal management. Operating temperature range -55 °C to 175 °C enabling harsh environment usage. Compliance with automotive AEC-Q101 standard. SO-8L package for PCB mounting in compact layouts.
Wide gate voltage tolerance ±20 V. Forward voltage drop of 1.2 V critical for power loss estimation.
This MOSFET is ideal for industrial motor drive switch arrays, DC-DC converters in high-voltage systems, synchronous rectification in power supplies, inverters, UPS front-end switching stages, and automotive power stages requiring reliable high power switching compliant with industry standards.
Explore the full range of Vishay Siliconix MOSFETs at EnvMart for your next power electronics design and system integration needs.
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