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Vishay Siliconix TrenchFET Type P-Channel MOSFET, 16 A, 80 V Enhancement, 45 W Power Dissipation, 8-Pin SO-8 SQJ481EP-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SQJ481EP-T1_GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports continuous drain current of 16 amperes for demanding electrical loads.
- Maximum drain-source voltage rating of 80 volts ensures reliable operation under high voltage conditions.
- Utilizes TrenchFET technology for enhanced efficiency and lower switching losses.
- Surface mount SO-8 package with 8 pins provides compact and robust mounting on printed circuit boards.
- Maximum power dissipation capability of 45 watts supports intensive power applications.
- Enhanced channel mode with a gate-source maximum voltage rating of 20 volts.
- Wide operating temperature range from -55°C to 175°C for durability under harsh conditions.
- Optimized for automotive standards, certified to AEC-Q101 for quality and reliability.
Product Description
Vishay Siliconix SQJ481EP-T1_GE3 is a high-performance TrenchFET type P-Channel MOSFET designed specifically for power management and automotive applications. It supports a continuous drain current of 16 A and is rated for an 80 V maximum drain-source voltage, providing robust performance in demanding environments.
Featuring an 8-pin SO-8 surface mount package, this MOSFET combines compact footprint with efficient heat dissipation capabilities, allowing it to handle up to 45 watts of power dissipation effectively. Its trench technology optimizes switching characteristics, resulting in lower conduction and switching losses, thus enhancing overall circuit efficiency.
The device operates with a maximum gate-source voltage of 20 V and features a low drain-source resistance of 90 milliohms at a gate voltage of 10 V, minimizing power loss during operation. Its wide operating temperature range from -55°C to 175°C ensures reliability and longevity in automotive and industrial applications.
This MOSFET complies with automotive standard AEC-Q101, guaranteeing quality and dependable performance under automotive stress conditions. Additional qualifications include ANSI/ESD S20.20 and BS EN 61340-5-1 certifications related to electrostatic discharge safety.
Supports continuous drain current of 16 amperes. Maximum drain-source voltage rating of 80 volts. TrenchFET technology enhances efficiency and reduces switching losses. Surface mount SO-8 package with 8 pins. Power dissipation capability of 45 watts.
Maximum gate-source voltage of 20 volts. Operating temperature range extends from -55°C to 175°C. Automotive standard compliance with AEC-Q101. Low drain-source resistance of 90 milliohms.
Ideal for use in automotive, industrial, and power management systems where efficient, reliable switching and power handling are essential. The SQJ481EP-T1_GE3 MOSFET is designed to provide dependable, long-lasting service by maintaining superior electrical characteristics over a broad range of temperatures and operating conditions.
Browse more Power MOSFETs from Vishay Siliconix on EnvMart for high-quality semiconductor components suited for various electronic and electrical applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 16 amperes.
This MOSFET has a maximum drain-source voltage rating of 80 volts.
It utilizes an 8-pin SO-8 surface mount package for compact and robust mounting.
The maximum power dissipation capability is 45 watts, suitable for intensive power applications.
The operating temperature range extends from -55°C to 175°C, ensuring reliability in harsh conditions.
The maximum gate-source voltage rating for this device is 20 volts.
The low drain-source resistance is 90 milliohms at a gate voltage of 10 volts.
Yes, it complies with the automotive standard AEC-Q101, ensuring quality and reliability under automotive stress conditions.
It has certifications for ANSI/ESD S20.20 and BS EN 61340-5-1 related to electrostatic discharge safety.
The typical gate charge at Vgs is 33 nanocoulombs.
The dimensions are 5.99 mm in length, 5 mm in width, and 1.07 mm in height.
It is optimized for automotive, industrial, and power management systems where efficient and reliable switching is essential.
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