Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V Enhancement Mode, SO-8 Package Si7190ADP-T1-RE3

Vishay Siliconix Si7190ADP-T1-RE3 is a high-performance TrenchFET N-Channel MOSFET designed for demanding power electronic applications. This device features a maximum continuous drain current rating of 14.4 A and a drain-source voltage rating of 250 V, making it suitable for a broad range of switching and amplification tasks in industrial, commercial, and consumer electronics.

Encased in an SO-8 surface mount package with 8 pins, this MOSFET provides efficient thermal dissipation and low thermal resistance PowerPAK® packaging, enabling enhanced reliability under high power loads up to 56.8 W. The device operates in enhancement mode, delivering a low on-resistance of 110 mΩ which helps in minimizing conduction losses and improving overall circuit efficiency.

Operating over a wide temperature range from -55°C to 150°C, the Si7190ADP-T1-RE3 withstands severe environmental conditions. Its typical gate charge of 14.9 nC at Vgs supports fast switching capabilities, making it ideal for power management, motor control, and switching regulator functions in industrial automation and consumer electronics.

This MOSFET offers a maximum gate-source voltage rating of 20 V, allowing it to tolerate significant gate drive voltages without damage, augmenting device robustness. Compact dimensions of height 1.07 mm, length 5.99 mm, and width 5 mm make it suitable for space-constrained PCB designs.

Manufactured in China, this product comes from Vishay Siliconix’s TrenchFET series, known for high-quality semiconductor components that excel in power efficiency and thermal performance.

Offers a maximum continuous drain current of 14.4 amperes. Features a maximum drain-source voltage of 250 volts for high voltage applications. Encapsulated in a compact SO-8 surface mount package with 8 pins. Utilizes TrenchFET technology ensuring low on-resistance and efficient switching.

Enhancement mode channel operation providing reliable performance. Maximum drain-source resistance of 110 milliohms for efficient conduction. Supports maximum power dissipation of 56.8 watts to handle high power loads. Operating temperature range from -55°C to 150°C for durability in harsh environments.

Typical gate charge of 14.9 nanocoulombs at gate-source voltage for switching efficiency. High maximum gate-source voltage of 20 volts ensuring robust gate drive tolerance.

This MOSFET is ideal for applications in power management circuits, industrial automation, consumer electronics, motor drivers, DC-DC converters, and other environments requiring reliable and efficient switching devices. Explore the comprehensive Vishay Siliconix semiconductor range at EnvMart for quality electronic components.