$0.69
$0.67
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay Siliconix TrenchFET Type N-Channel MOSFET 2 A 60 V Enhancement 3-Pin SOT-23 SQ2364EES-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SQ2364EES-T1_GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 2nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 1.2V |
Key Features
- Surface mount device in a compact 3-pin SOT-23 package.
- Enhancement mode operation suitable for automotive applications.
- Maximum power dissipation rating at 3 W for reliable thermal performance.
- Wide operating temperature range from -55°C to 175°C.
- Low drain-source resistance of 600 mΩ ensuring efficient conduction.
- Maximum gate-source voltage of 8 V to ensure proper switching control.
- Typical gate charge of 2 nC supports low switching losses.
- Compliance with automotive standard AEC-Q101 for quality assurance.
Product Description
The Vishay Siliconix SQ2364EES-T1_GE3 is a TrenchFET type N-channel MOSFET designed for efficient and reliable switching in automotive and other industrial electronics. This discrete semiconductor device supports a maximum continuous drain current of 2 A and a maximum drain-source voltage of 60 V, enabling it to perform well in medium power switching applications. Packaged in a surface mount 3-pin SOT-23 case, it offers compactness and ease of integration on PCBs.
Operating within a broad temperature range from -55°C to 175°C, the MOSFET is built to withstand harsh environments, making it fit for automotive and industrial use where temperature extremes are common. It features an enhancement channel mode, 600 milliohms maximum drain-source resistance, and a typical gate charge of only 2 nC at gate voltage 2 V, leading to low conduction and switching losses for improved power efficiency.
The device complies with the AEC-Q101 automotive qualification standard, ensuring reliability and long life in automotive electronic systems. Its maximum gate-source voltage of 8 V and forward voltage of 1.2 V make it suitable for robust drive circuits. With compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height, it fits well in high-density circuit designs.
This type N-channel MOSFET is halogen-free and lead-free, contributing to environmentally friendly electronics manufacturing. Its optimized TrenchFET design reduces switching and conduction losses, enhancing overall device performance without sacrificing durability. It is ideal for use in power management, automotive electronics, and general electronic circuits requiring efficient switching and load handling.
Surface mount 3-pin SOT-23 package for space saving on PCBs. AEC-Q101 compliant for automotive reliability. Wide operating temperature from -55°C to 175°C for harsh environments. Low Rds(on) at 600 mΩ ensuring efficient conduction.
Maximum continuous drain current of 2 A suitable for moderate loads. Maximum power dissipation of 3 W supports thermal stability. Enhancement mode type N-channel enables straightforward gate control. Typical gate charge of 2 nC lowers switching losses.
Halogen and lead-free for eco-friendly electronics. Explore more specialized semiconductor components from Vishay Siliconix on EnvMart for enhanced performance and quality in your electronics designs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 2 A.
It has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation rating is 3 W, which supports reliable thermal performance.
The typical gate charge is 2 nC at a gate voltage of 2 V, which helps in reducing switching losses.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It operates within a temperature range from -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage is 8 V, ensuring proper switching control.
The maximum drain-source resistance is 600 mΩ, ensuring efficient conduction.
Yes, it complies with the AEC-Q101 automotive standard for quality assurance.
This model uses an enhancement mode type N-channel design.
The forward voltage is 1.2 V, which is relevant for robust drive circuits.
The country of origin for this MOSFET is China.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$0.69
$0.67
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent