Vishay Siliconix TrenchFET N-Channel MOSFET, 100 A, 30 V, 125 W Power Dissipation, 8-Pin SO-8 SiDR392DP-T1-GE3

Vishay Siliconix SiDR392DP-T1-GE3 is a TrenchFET N-Channel MOSFET designed for demanding industrial and electronic circuit applications where high conduction current and efficient switching are required. Rated for a maximum continuous drain current of 100 A and a drain-source voltage of 30 V, this MOSFET supports high power dissipation up to 125 W. It features a low on-resistance of 900 micro-ohms which minimizes power loss and heat generation.

This device is housed in a compact 8-pin SO-8 surface-mount package, facilitating ease of integration on printed circuit boards. The 125 nC gate charge and gate-source voltage ratings of +20 V and +6 V support optimized and safe switching operation. It operates reliably across a wide temperature range from -55°C to 150°C, suitable for environments requiring robust thermal performance.

TrenchFET Gen IV technology enhances thermal transfer via top-side cooling, allowing more effective heat dissipation, making this MOSFET suitable for automotive and industrial power applications. Its small package dimensions of 5.99 mm length, 5 mm width, and 1.07 mm height enable high density PCB designs.

This MOSFET is commonly used in power management modules, motor drives, DC-DC converters, and other high-current switching circuits within industrial, automotive, and commercial electronic systems. It is compliant with relevant technical standards and designed for surface mount technology.

This MOSFET supports a maximum continuous drain current of 100 A. The maximum drain-source voltage is 30 V, suitable for low-voltage power electronics. Features an ultra-low on-resistance of 900 micro-ohms for minimal conduction losses.

Power dissipation rating of 125 W ensures robust operation under load. Package type is SO-8 with 8 pins to support surface mount mounting. Operational temperature range from -55°C to 150°C guarantees reliability under harsh conditions.

Typical gate charge of 125 nC optimizes device switching performance. Top-side cooling enhanced via TrenchFET Gen IV architecture enables efficient heat dissipation. Compact physical size supports modern compact PCB layouts.

Applicable in industrial, automotive, and commercial semiconductor applications.

This high-performance Vishay Siliconix TrenchFET MOSFET is an excellent choice for engineers and designers requiring reliable, efficient power switching devices. Discover more innovative semiconductor solutions in the Semiconductors category on EnvMart.