Vishay Siliconix TrenchFET N-Channel MOSFET 60 A 60 V Enhancement Mode 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix SiR188DP-T1-RE3 is a high-performance TrenchFET N-Channel MOSFET designed to support continuous high current and voltage requirements in advanced electronic applications. It is housed in a compact 8-pin SO-8 surface mount package, enabling easy integration on printed circuit boards where space optimization is critical.

This device supports a maximum continuous drain current of 60 A and a maximum drain-source voltage of 60 V, making it suitable for power switching and amplification tasks in industrial, automotive, and consumer electronics sectors. Its enhancement channel mode operation enhances switching performance and control.

With maximum power dissipation rated at 65.7 W, the MOSFET ensures thermal robustness for high-duty cycles and power-demanding operations. It also operates reliably across a wide temperature range from -55°C to 150°C, ensuring stable function under harsh environmental conditions.

The typical gate charge of 29 nC at Vgs provides an efficient switching capability, reducing power losses in fast switching circuits. The maximum gate-source voltage of 20 V allows compatibility with common gate driver designs without risk of damage. Its forward voltage drop of 1.1 V further contributes to energy efficiency by minimizing conduction losses.

The MOSFET’s physical dimensions of 1.07 mm height, 5.99 mm length, and 5 mm width accommodate high-density circuit layouts, and the device bears the hallmark of Vishay Siliconix’s TrenchFET Gen IV technology, characterized by a very low drain-source resistance (RDS) and gate charge figure of merit (FOM).

Maximum drain current: 60 A for high-load applications. Drain-source voltage up to 60 V for versatile power management. Surface-mount SO-8 package enhances board space efficiency. TrenchFET Gen IV technology delivers low RDS and optimized switching.

Operating temperature range from -55°C to 150°C for reliability. Gate charge of 29 nC makes it suitable for high-speed switching. Rated power dissipation is 65.7 W to handle demanding power loads. Compact physical dimensions suit modern electronic assemblies.

This N-channel MOSFET is ideal for industrial electronics, power management systems, automotive control units, and any application requiring efficient, reliable semiconductor switching elements. Its robust specifications and compact format make it a reliable choice for demanding circuit designs.

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