Vishay Siliconix TrenchFET Type P-Channel MOSFET, 10 A Drain Current, 30 V Drain Source Voltage, 13.6 W SQA403EJ-T1_GE3

Vishay Siliconix SQA403EJ-T1_GE3 is a high-performance TrenchFET P-Channel MOSFET designed for efficient power management in electronic devices. This semiconductor component is rated for a continuous drain current of 10 amperes and a drain source voltage of 30 volts, making it ideal for applications requiring robust current handling and switching capabilities.

Its enhancement mode operation provides precise control of current flow, and the low 30 milliohm maximum drain source resistance contributes to reduced power losses and improved thermal management.

Packaged in a compact 6-pin SC-70 surface mount package, this MOSFET is suitable for space-constrained circuit boards found in consumer electronics, automotive systems, and industrial equipment. The device withstands operating temperatures from -55°C up to 175°C, ensuring durability in harsh environmental conditions.

The typical gate charge of 26 nanoCoulombs allows fast switching speeds, improving overall efficiency in power conversion and signal modulation tasks. Furthermore, the component complies with the automotive industry standard AEC-Q101, corroborating its reliability in automotive electronic control units and related systems.

Dimensionally, it measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, facilitating integration into densely packed electronic assemblies. Designed with TrenchFET technology for improved efficiency and switching performance.

Compact 6-pin SC-70 surface mount package suitable for modern circuit boards. Maximum power dissipation of 13.6 watts enhances durability under load. Low 30 milliohm maximum drain source resistance reduces conduction losses.

Operating temperature range from -55°C to 175°C for high reliability. Enhancement mode MOSFET with maximum gate voltage of 20 V. Typical gate charge of 26 nC supports fast switching applications. Certified to automotive standard AEC-Q101 for automotive electronic use.

Dimensions: 2.2 mm (L) x 1.35 mm (W) x 1 mm (H) for compact design requirements. Manufactured in China under stringent quality controls.

This Vishay Siliconix MOSFET is widely used across industrial, automotive, and consumer electronic sectors requiring efficient power switching and amplification. It is ideal for enhancing power conversion circuits, DC/DC converters, load switching, and protection circuits.

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