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| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay Siliconix |
| Height | 11.3mm |
| Length | 10.67mm |
| Model | SQM40016EM_GE3 |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 250A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.001Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 245nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Vishay Siliconix SQM40016EM_GE3 is a high-performance TrenchFET N-Channel MOSFET designed for industrial and automotive power electronics applications. It offers a robust maximum continuous drain current of 250 A and a drain-source voltage rating of 40 V, making it well suited for demanding power switching use cases.
The device is housed in a compact TO-263 7-pin surface mount package which provides low thermal resistance, enhancing the thermal management in high power circuits. Featuring enhancement mode channel operation, it delivers reliable and efficient switching performance with a maximum drain-source resistance of only 0.001 Ω, reducing conduction losses significantly.
Designed for operation in harsh environments, the MOSFET supports a wide temperature range from -55°C to 175°C, including compliance with the AEC-Q101 automotive qualification standard. This makes it an excellent choice for automotive, industrial, and power management systems.
The typical gate charge of 245 nC at gate-source voltage ensures efficient gate drive capability, reducing switching losses and improving overall system efficiency. The device’s maximum power dissipation rating of 300 W allows it to handle high power loads effectively.
Physical dimensions of the component are 10.67 mm in length, 4.83 mm in width, and 11.3 mm in height, enabling compact PCB designs. The MOSFET is manufactured in Taiwan, Province Of China, ensuring quality in fabrication.
TrenchFET power MOSFET technology for improved efficiency. Surface mount TO-263 package with 7 pins. High current rating of 250 A continuous drain current. 40 V drain-source voltage for medium voltage applications. Low Rds(on) of 0.001 Ω for reduced conduction losses.
Broad operating temperature range from -55°C to 175°C. Automotive grade AEC-Q101 certification. Typical gate charge of 245 nC at Vgs. Maximum power dissipation of 300 W. Compact dimensions for space-saving PCB layouts.
This Vishay Siliconix TrenchFET MOSFET is ideal for industrial power management, automotive electronics, manufacturing equipment, and other electronic circuits requiring high current and efficient switching. Explore the electronics and semiconductors category on EnvMart for more such components and solutions.
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Vishay Siliconix TrenchFET N-Channel MOSFET TO-263, 250 A, 40 V Enhancement Mode, 7-Pin SQM40016EM_GE3
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