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Vishay Siliconix TrenchFET N-Channel MOSFET TO-263, 250 A, 40 V Enhancement Mode, 7-Pin SQM40016EM_GE3

Category MOSFET Brand Vishay Siliconix Condition New

Specifications

Country of Origin Taiwan
Brand Vishay Siliconix
Height 11.3mm
Length 10.67mm
Model SQM40016EM_GE3
Width 4.83mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101
Pin Count 7
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 250A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.001Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 245nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • Designed with TrenchFET technology for low thermal resistance and high efficiency.
  • Equipped with a TO-263 package with 7 pins for surface mounting.
  • Features enhancement mode channel operation for reliable switching.
  • Maximum power dissipation is 300 W suitable for high-power applications.
  • Has a low maximum drain-source resistance of 0.001 Ω ensuring minimal conduction losses.
  • Operating temperature range from -55°C to 175°C supports automotive and industrial environments.
  • Typical gate charge of 245 nC at Vgs provides efficient gate drive.
  • Complies with AEC-Q101 automotive standard for quality and reliability.

Product Description

Vishay Siliconix SQM40016EM_GE3 is a high-performance TrenchFET N-Channel MOSFET designed for industrial and automotive power electronics applications. It offers a robust maximum continuous drain current of 250 A and a drain-source voltage rating of 40 V, making it well suited for demanding power switching use cases.

The device is housed in a compact TO-263 7-pin surface mount package which provides low thermal resistance, enhancing the thermal management in high power circuits. Featuring enhancement mode channel operation, it delivers reliable and efficient switching performance with a maximum drain-source resistance of only 0.001 Ω, reducing conduction losses significantly.

Designed for operation in harsh environments, the MOSFET supports a wide temperature range from -55°C to 175°C, including compliance with the AEC-Q101 automotive qualification standard. This makes it an excellent choice for automotive, industrial, and power management systems.

The typical gate charge of 245 nC at gate-source voltage ensures efficient gate drive capability, reducing switching losses and improving overall system efficiency. The device’s maximum power dissipation rating of 300 W allows it to handle high power loads effectively.

Physical dimensions of the component are 10.67 mm in length, 4.83 mm in width, and 11.3 mm in height, enabling compact PCB designs. The MOSFET is manufactured in Taiwan, Province Of China, ensuring quality in fabrication.

TrenchFET power MOSFET technology for improved efficiency. Surface mount TO-263 package with 7 pins. High current rating of 250 A continuous drain current. 40 V drain-source voltage for medium voltage applications. Low Rds(on) of 0.001 Ω for reduced conduction losses.

Broad operating temperature range from -55°C to 175°C. Automotive grade AEC-Q101 certification. Typical gate charge of 245 nC at Vgs. Maximum power dissipation of 300 W. Compact dimensions for space-saving PCB layouts.

This Vishay Siliconix TrenchFET MOSFET is ideal for industrial power management, automotive electronics, manufacturing equipment, and other electronic circuits requiring high current and efficient switching. Explore the electronics and semiconductors category on EnvMart for more such components and solutions.

Vishay Siliconix TrenchFET N-Channel MOSFET TO-263, 250 A, 40 V Enhancement Mode, 7-Pin SQM40016EM_GE3
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Frequently Asked Questions

The maximum continuous drain current of this model is 250 A, making it suitable for high-power applications.

This MOSFET has a maximum drain-source voltage rating of 40 V, which is appropriate for medium voltage applications.

It is housed in a TO-263 package with 7 pins, designed for surface mounting.

This model can handle a maximum power dissipation of 300 W, suitable for high power loads.

The typical gate charge at gate-source voltage (Vgs) is 245 nC, which aids in efficient gate drive performance.

It features a low maximum drain-source resistance of 0.001 Ω, which minimizes conduction losses.

Yes, it complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The physical dimensions are 10.67 mm in length, 4.83 mm in width, and 11.3 mm in height, allowing for compact PCB designs.

This model operates with enhancement mode channel technology, providing reliable switching performance.

This MOSFET is manufactured in Taiwan, ensuring quality in fabrication.

It is suitable for industrial power management, automotive electronics, and other electronic circuits requiring high current and efficient switching.

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