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Vishay Siliconix Dual TrenchFET MOSFET, 2 Channel, N & P-Type, 30A, 40V, SO-8, SQJ504EP-T1_GE3

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Vishay Siliconix Dual TrenchFET MOSFET, 2 Channel, N & P-Type, 30A, 40V, SO-8, SQJ504EP-T1_GE3

Name: Vishay Siliconix Dual TrenchFET MOSFET, 2 Channel, N & P-Type, 30A, 40V, SO-8, SQJ504EP-T1_GE3
Brand: Vishay Siliconix
SKU: 81882
Price: 0.94 USD
Availability: InStock

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Category MOSFET Brand Vishay Siliconix Condition New

Specifications

Country of Origin	China
Brand	Vishay Siliconix
Height	1.07mm
Length	5.99mm
Model	SQJ504EP-T1_GE3
Width	5mm
Mount Type	Surface
Series	TrenchFET
Maximum Operating Temperature	175°C
Package Type	SO-8
Minimum Operating Temperature	-55°C
Pin Count	8
ANSI/ESD S20.20	2014
BS EN 61340-5-1	2007
Number of Elements per Chip	2
Automotive Standard	AEC-Q101
Channel Type	Type N, Type P
Maximum Continuous Drain Current Id	30A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	30mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	34W
Typical Gate Charge Qg @ Vgs	12.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V
Transistor Configuration	Dual

Key Features

Dual channel MOSFET combining N-type and P-type enhancements.
Supports maximum continuous drain current of 30A at 40V drain-source voltage.
Surface-mount SO-8 packaging for compact PCB integration.
Low drain-source resistance of 30 milliohms for minimal power loss.
TrenchFET technology ensures high performance and reliability.
Operating temperature range from -55°C to 175°C, suitable for demanding environments.
Certified to automotive AEC-Q101 and ESD standards.
Halogen-free and lead-free construction for environmental compliance.

Product Description

The Vishay Siliconix SQJ504EP-T1_GE3 is a high-performance Dual TrenchFET MOSFET designed for modern automotive and industrial power applications. Featuring a dual-channel configuration, it integrates both N-type and P-type channels within a compact SO-8 surface-mount package, allowing engineers to optimize circuit layouts for efficiency and space savings.

Engineered using advanced TrenchFET technology, this MOSFET supports a maximum drain-source voltage of 40V and continuous drain current up to 30A. The device’s low drain-source resistance of 30 milliohms minimizes conduction losses, boosting switching efficiency and reducing heat dissipation within high-current environments.

With a channel mode of enhancement and a typical gate charge of 12.1nC at Vgs, the SQJ504EP-T1_GE3 is highly responsive and suitable for power switching, battery management, and motor control applications. Its forward voltage drop of 1.2V allows effective regulation under demanding load conditions. Safety and reliability are further secured by robust certifications, including AEC-Q101 automotive qualification and compliance with ANSI/ESD S20.20 and BS EN 61340-5-1:2007 ESD standards.

The MOSFET supports wide operating temperatures from -55°C to 175°C, making it ideal for environments where thermal cycling and extreme conditions are expected. Its dual-channel design enables designers to implement both high- and low-side switching with a single component, simplifying system architectures and improving BOM efficiency.

Applications include automotive electronics, motor drivers, power supplies, and battery protection circuits. Environmental compliance features, such as halogen-free and lead-free construction, make it suitable for manufacturers aiming to meet green standards in product development.

Dimensions are compact, with a length of 5.99mm, width of 5mm, and height of 1.07mm, supporting tight PCB layouts. The surface-mount form factor simplifies manufacturing via SMT processes and supports automated assembly lines.

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