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| Country of Origin | India |
|---|---|
| Brand | Fairchild Semiconductor |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | IRF630 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 75W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRF630 9A 200V 50pcsBrand | Fairchild Semiconductor |
STMicroelectronics IRF630 is a high-performance N-Channel STripFET MOSFET designed for power switching and amplification applications. It features a 9 ampere continuous drain current and a drain-source voltage rating of 200 volts, which makes it suitable for various industrial and electronic equipment where robust power handling is essential.
Housed in a reliable TO-220 through-hole package with 3 pins, this MOSFET supports easy mechanical mounting and thermal management. The device operates in enhancement mode, providing high switching efficiency and low conduction losses with a maximum drain-source resistance of 400 milliohms.
This transistor features a maximum power dissipation of 75 watts, making it well suited for demanding applications including power supplies, motor controls, and electronic load switch circuits. Its wide operating temperature range from -65°C to 150°C ensures stable performance under harsh environmental conditions.
The gate of the IRF630 can tolerate voltages up to ±20V, ensuring durability against spikes. A typical gate charge of 31 nanocoulombs at standard gate voltage enhances switching speed, reducing losses and improving overall circuit efficiency.
Physical dimensions of this device are compact and industry standard: length 10.4mm, width 4.6mm, height 9.15mm, allowing for flexible PCB layouts. The design incorporates STMicroelectronics' STripFET technology for enhanced channel conductivity and thermal performance.
Enhancement mode MOSFET with N-channel conduction. Rated for 9A maximum continuous drain current. Maximum drain-source voltage of 200V withstands demanding power conditions. Three-pin TO-220 package for through-hole mounting.
Maximum power dissipation of 75W supports high power applications. Wide temperature operation from -65°C to 150°C. Typical gate charge 31nC at Vgs for efficient switching. Maximum drain-source resistance of 400 milliohms minimizes conduction losses.
This MOSFET is ideal for use in industrial electronics, power supply design, motor control systems, and discrete semiconductor applications. STMicroelectronics' robust manufacturing and quality processes support reliability and performance in various technical environments.
Explore more reliable power semiconductor devices and MOSFETs in EnvMart's Electronics & Electricals category to suit your project's requirements.
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