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Fairchild Semiconductor N-Channel STripFET MOSFET 9A 200V Enhancement Mode 3-Pin TO-220 IRF630

Category MOSFET Brand Fairchild Semiconductor Condition New

Specifications

Country of Origin India
Brand Fairchild Semiconductor
Height 9.15mm
Length 10.4mm
Model IRF630
Width 4.6mm
Mount Type Through Hole
Series STripFET
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 9A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 75W
Typical Gate Charge Qg @ Vgs 31nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V
N-channel MOSFET,IRF630 9A 200V 50pcsBrand Fairchild Semiconductor

Key Features

  • Enhancement mode channel offers reliable and efficient switching performance.
  • Maximum power dissipation rating of 75W supports high-power applications.
  • Through-hole mount type ensures easy PCB integration and mechanical security.
  • Maximum drain-source resistance of 400mΩ reduces conduction losses.
  • Operational temperature range from -65°C to 150°C suitable for harsh environments.
  • Typical gate charge of 31nC at Vgs provides fast switching characteristics.
  • Designed with STripFET technology for optimized channel performance.
  • Maximum gate-source voltage of ±20V protects against excessive gate drive.

Product Description

STMicroelectronics IRF630 is a high-performance N-Channel STripFET MOSFET designed for power switching and amplification applications. It features a 9 ampere continuous drain current and a drain-source voltage rating of 200 volts, which makes it suitable for various industrial and electronic equipment where robust power handling is essential.

Housed in a reliable TO-220 through-hole package with 3 pins, this MOSFET supports easy mechanical mounting and thermal management. The device operates in enhancement mode, providing high switching efficiency and low conduction losses with a maximum drain-source resistance of 400 milliohms.

This transistor features a maximum power dissipation of 75 watts, making it well suited for demanding applications including power supplies, motor controls, and electronic load switch circuits. Its wide operating temperature range from -65°C to 150°C ensures stable performance under harsh environmental conditions.

The gate of the IRF630 can tolerate voltages up to ±20V, ensuring durability against spikes. A typical gate charge of 31 nanocoulombs at standard gate voltage enhances switching speed, reducing losses and improving overall circuit efficiency.

Physical dimensions of this device are compact and industry standard: length 10.4mm, width 4.6mm, height 9.15mm, allowing for flexible PCB layouts. The design incorporates STMicroelectronics' STripFET technology for enhanced channel conductivity and thermal performance.

Enhancement mode MOSFET with N-channel conduction. Rated for 9A maximum continuous drain current. Maximum drain-source voltage of 200V withstands demanding power conditions. Three-pin TO-220 package for through-hole mounting.

Maximum power dissipation of 75W supports high power applications. Wide temperature operation from -65°C to 150°C. Typical gate charge 31nC at Vgs for efficient switching. Maximum drain-source resistance of 400 milliohms minimizes conduction losses.

This MOSFET is ideal for use in industrial electronics, power supply design, motor control systems, and discrete semiconductor applications. STMicroelectronics' robust manufacturing and quality processes support reliability and performance in various technical environments.

Explore more reliable power semiconductor devices and MOSFETs in EnvMart's Electronics & Electricals category to suit your project's requirements.

Fairchild Semiconductor N-Channel STripFET MOSFET 9A 200V Enhancement Mode 3-Pin TO-220 IRF630
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Frequently Asked Questions

The IRF630 has a maximum continuous drain current rating of 9A.

It can withstand a maximum drain-source voltage of 200V.

The maximum power dissipation rating for this model is 75W.

The maximum drain-source resistance is 400 milliohms (400mΩ).

The typical gate charge at Vgs is 31 nanocoulombs (31nC).

This model operates within a temperature range of -65°C to 150°C.

It is housed in a TO-220 package, which is a through-hole mount type.

The IRF630 has a pin count of 3.

The IRF630 features an N-channel configuration.

The maximum gate-source voltage is ±20V.

This MOSFET is suitable for power supplies, motor controls, and electronic load switch circuits.

It incorporates STripFET technology for optimized channel performance.

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