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Fairchild Semiconductor N-Channel MDmesh SuperMESH MOSFET, 7.2 A, 500 V, 110 W TO-220 STP9NK50Z

Category Semiconductors Brand Fairchild Semiconductor Condition New

Specifications

Country of Origin India
Brand Fairchild Semiconductor
Height 9.15mm
Length 10.4mm
Model STP9NK50Z
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7.2A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 850mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 32nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V
FAIR N channel MOSFET,IRF840 8A 500VBrand Fairchild Semiconductor
N-Channel MOSFET Transistor, 7.3 A, 600 V, 3-Pin TO-220 Infineon SPP07N60S5Brand Infineon

Key Features

  • The MOSFET operates with a maximum power dissipation of 110 Watts.
  • It has a typical gate charge of 32 nC at rated gate-source voltage.
  • Maximum gate-source voltage ratings are -30 V to +30 V.
  • The device supports a maximum operating temperature of 150°C and a minimum of -55°C.
  • The drain-source resistance (Rds) is typically 850 mΩ.
  • Designed for through-hole mounting in various power electronic applications.

Product Description

STMicroelectronics STP9NK50Z is a high-quality N-Channel MDmesh™ SuperMESH™ MOSFET transistor designed for efficient power switching applications in industrial and electronic circuits.

It features a TO-220 3-pin through-hole package that ensures reliable mechanical and thermal performance. The device is rated for a maximum continuous drain current (Id) of 7.2 A with a maximum drain-source voltage (Vds) of 500 V, suitable for demanding high-voltage switching tasks.

This enhancement mode MOSFET has a typical drain-source resistance (Rds) of 850 milliohms, contributing to low conduction losses and improved energy efficiency in power conversion and motor control systems.

The gate charge is rated at a typical 32 nC which optimizes switching speed and reduces driving losses. The device withstands a maximum gate-source voltage from -30 volts to +30 volts and operates reliably in a wide temperature range from -55°C to +150°C.

Physical dimensions measure 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width, making it compatible with standard PCB mount designs for power electronics, automotive electronics, HVAC controls, and industrial manufacturing equipment.

High power dissipation capacity of 110 Watts ensures stable operation under heavy load. Robust enhancement mode MOSFET architecture for reliable switching performance. Compact TO-220 package facilitates easy mounting and heat dissipation.

Suitable for power management, motor drives, and switching power supplies. Wide operating temperature range supports harsh industrial environments.

This MOSFET is ideal for professional engineering applications including industrial controllers, power supply regulation, and energy-efficient motor control solutions. It supports developers in creating durable and high-performance electronic systems.

Explore more STMicroelectronics power semiconductor solutions and related components in the EnvMart Electronics & Electricals Semiconductor category for comprehensive project needs and industrial-grade quality.

Explore more products in our Semiconductors category.

Fairchild Semiconductor N-Channel MDmesh SuperMESH MOSFET, 7.2 A, 500 V, 110 W TO-220 STP9NK50Z
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Frequently Asked Questions

The maximum continuous drain current (Id) for this model is 7.2 A.

This MOSFET has a maximum drain-source voltage (Vds) rating of 500 V.

The typical gate charge (Qg) at rated gate-source voltage is 32 nC.

It supports a maximum power dissipation of 110 Watts.

The dimensions are 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width.

The operating temperature range is from -55°C to 150°C.

This model is designed for through-hole mounting.

The typical drain-source resistance (Rds) is 850 mΩ.

The maximum gate-source voltage (Vgs) ratings are -30 V to +30 V.

It belongs to the MDmesh and SuperMESH series.

This model is suitable for power management, motor drives, and switching power supplies.

The package type is TO-220.

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