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| Country of Origin | India |
|---|---|
| Brand | Fairchild Semiconductor |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP9NK50Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
| FAIR N channel MOSFET,IRF840 8A 500VBrand | Fairchild Semiconductor |
| N-Channel MOSFET Transistor, 7.3 A, 600 V, 3-Pin TO-220 Infineon SPP07N60S5Brand | Infineon |
STMicroelectronics STP9NK50Z is a high-quality N-Channel MDmesh™ SuperMESH™ MOSFET transistor designed for efficient power switching applications in industrial and electronic circuits.
It features a TO-220 3-pin through-hole package that ensures reliable mechanical and thermal performance. The device is rated for a maximum continuous drain current (Id) of 7.2 A with a maximum drain-source voltage (Vds) of 500 V, suitable for demanding high-voltage switching tasks.
This enhancement mode MOSFET has a typical drain-source resistance (Rds) of 850 milliohms, contributing to low conduction losses and improved energy efficiency in power conversion and motor control systems.
The gate charge is rated at a typical 32 nC which optimizes switching speed and reduces driving losses. The device withstands a maximum gate-source voltage from -30 volts to +30 volts and operates reliably in a wide temperature range from -55°C to +150°C.
Physical dimensions measure 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width, making it compatible with standard PCB mount designs for power electronics, automotive electronics, HVAC controls, and industrial manufacturing equipment.
High power dissipation capacity of 110 Watts ensures stable operation under heavy load. Robust enhancement mode MOSFET architecture for reliable switching performance. Compact TO-220 package facilitates easy mounting and heat dissipation.
Suitable for power management, motor drives, and switching power supplies. Wide operating temperature range supports harsh industrial environments.
This MOSFET is ideal for professional engineering applications including industrial controllers, power supply regulation, and energy-efficient motor control solutions. It supports developers in creating durable and high-performance electronic systems.
Explore more STMicroelectronics power semiconductor solutions and related components in the EnvMart Electronics & Electricals Semiconductor category for comprehensive project needs and industrial-grade quality.
Explore more products in our Semiconductors category.
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