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| Country of Origin | India |
|---|---|
| Brand | Fairchild Semiconductor |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP55NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 44.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
| N-Channel MOSFET Transistor, 50 A, 60 V, 5-Pin TO-220 Vishay IRCZ44PBFBrand | Vishay |
| N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 Infineon IPP093N06N3GXKSA1Brand | Infineon |
STMicroelectronics STP55NF06 is a STripFET II N-Channel MOSFET designed for high power and efficient switching applications. Rated at 50 amperes continuous drain current and 60 volts drain-source voltage, this device supports enhancement mode switching and is housed in a 3-pin TO-220 package with through-hole mounting compatibility. It features ultra-low on-resistance of 18 milliohms which minimizes conduction losses and a typical gate charge of 44.5 nanoCoulombs that enables fast switching cycles for demanding electronic circuits.
The MOSFET supports operation over an extensive temperature range from -55 degrees Celsius up to 175 degrees Celsius, making it suitable for harsh industrial environments. Its maximum power dissipation of 110 watts allows reliable performance under high load conditions. Dimensions of the transistor are compact with a length of 10.4 millimeters, a width of 4.6 millimeters, and a height of 9.15 millimeters, facilitating space-saving PCB layouts. The device is rated with a maximum gate-source voltage of -20 volts to +20 volts, ensuring robust gate control.
This transistor is widely used in power management, motor control, and switching regulators across industrial, commercial, and electronic manufacturing sectors. The TO-220 package allows easy integration into systems that require efficient heat dissipation and mechanical stability.
Enhancement mode N-channel MOSFET offering continuous 50 A current capacity. Low on-resistance of 18 mΩ optimizes efficiency during conduction. Supports up to 60 V drain-source voltage for medium voltage power applications.
110 W maximum power dissipation for heavy-duty operations. Wide temperature range operation suited for industrial environments. Compact TO-220 3-pin package with through-hole mounting compatibility. Typical gate charge suitable for high-speed switching designs.
Robust gate-source voltage tolerance between -20 V and +20 V.
This STMicroelectronics MOSFET supports wide-ranging industrial and electronic applications including power supplies, motor drives, and switching circuits. Its high current and voltage ratings combined with efficient thermal management make it ideal for enhancing power management systems. Explore other power semiconductor components and MOSFET devices from STMicroelectronics for optimized performance in your projects.
Explore more products in our MOSFETs category.
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