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Fairchild Semiconductor STripFET II N-Channel MOSFET 60 V 50 A Enhancement Mode 3-Pin TO-220 STP55NF06

Category MOSFETs Brand Fairchild Semiconductor Condition New

Specifications

Country of Origin India
Brand Fairchild Semiconductor
Height 9.15mm
Length 10.4mm
Model STP55NF06
Width 4.6mm
Mount Type Through Hole
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 18mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 44.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V
N-Channel MOSFET Transistor, 50 A, 60 V, 5-Pin TO-220 Vishay IRCZ44PBFBrand Vishay
N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 Infineon IPP093N06N3GXKSA1Brand Infineon

Key Features

  • Enhancement mode transistor with low on-resistance of 18 mΩ.
  • Constructed in a TO-220 package suitable for through-hole mounting.
  • Maximum power dissipation of 110 W ensuring efficient heat handling.
  • Wide operating temperature range from -55°C to 175°C.
  • Typical gate charge of 44.5 nC for fast switching performance.
  • Maximum gate-source voltage rating of -20 V to +20 V.
  • Ideal for industrial and electronic power management applications.

Product Description

STMicroelectronics STP55NF06 is a STripFET II N-Channel MOSFET designed for high power and efficient switching applications. Rated at 50 amperes continuous drain current and 60 volts drain-source voltage, this device supports enhancement mode switching and is housed in a 3-pin TO-220 package with through-hole mounting compatibility. It features ultra-low on-resistance of 18 milliohms which minimizes conduction losses and a typical gate charge of 44.5 nanoCoulombs that enables fast switching cycles for demanding electronic circuits.

The MOSFET supports operation over an extensive temperature range from -55 degrees Celsius up to 175 degrees Celsius, making it suitable for harsh industrial environments. Its maximum power dissipation of 110 watts allows reliable performance under high load conditions. Dimensions of the transistor are compact with a length of 10.4 millimeters, a width of 4.6 millimeters, and a height of 9.15 millimeters, facilitating space-saving PCB layouts. The device is rated with a maximum gate-source voltage of -20 volts to +20 volts, ensuring robust gate control.

This transistor is widely used in power management, motor control, and switching regulators across industrial, commercial, and electronic manufacturing sectors. The TO-220 package allows easy integration into systems that require efficient heat dissipation and mechanical stability.

Enhancement mode N-channel MOSFET offering continuous 50 A current capacity. Low on-resistance of 18 mΩ optimizes efficiency during conduction. Supports up to 60 V drain-source voltage for medium voltage power applications.

110 W maximum power dissipation for heavy-duty operations. Wide temperature range operation suited for industrial environments. Compact TO-220 3-pin package with through-hole mounting compatibility. Typical gate charge suitable for high-speed switching designs.

Robust gate-source voltage tolerance between -20 V and +20 V.

This STMicroelectronics MOSFET supports wide-ranging industrial and electronic applications including power supplies, motor drives, and switching circuits. Its high current and voltage ratings combined with efficient thermal management make it ideal for enhancing power management systems. Explore other power semiconductor components and MOSFET devices from STMicroelectronics for optimized performance in your projects.

Explore more products in our MOSFETs category.

Fairchild Semiconductor STripFET II N-Channel MOSFET 60 V 50 A Enhancement Mode 3-Pin TO-220 STP55NF06
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Frequently Asked Questions

The maximum continuous drain current for this model is 50 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It features an ultra-low on-resistance of 18 mΩ, which minimizes conduction losses.

The typical gate charge for this model is 44.5 nC, allowing for fast switching performance.

It operates over a wide temperature range from -55°C to 175°C.

The maximum power dissipation is rated at 110 W, ensuring efficient heat handling.

This model is housed in a 3-pin TO-220 package suitable for through-hole mounting.

The maximum gate-source voltage rating for this MOSFET is -20 V to +20 V.

The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

It is widely used in power management, motor control, and switching regulators across various sectors.

The STP55NF06 is an N-channel MOSFET, which supports enhancement mode switching.

The country of origin for this model is India.

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