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Fairchild Semiconductor Silicon Junction Switching Diode 2-Pin DO-35 100 V 400 mA 1N4148TA

Category Semiconductor Diode Brand Fairchild Semiconductor Condition New

Specifications

Country of Origin India
Diameter 1.91mm
Brand Fairchild Semiconductor
Height 1.91mm
Length 4.56mm
Model 1N4148TA
Width 1.91mm
Mount Type Through Hole
Series 1N4x48
Maximum Operating Temperature 175°C
Package Type DO-35
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Small signal silicon junction diode optimized for switching.
  • Through-hole mount with durable DO-35 package.
  • Maximum repetitive reverse voltage rating of 100 V.
  • Supports peak non-repetitive forward surge current up to 4 A.
  • Operating temperature range from -65°C to 175°C for robust usage environments.
  • Fast reverse recovery time of 4 ns ensures high-speed switching.
  • Maximum forward voltage drop of 1 V for efficient operation.
  • Compact dimensions of approximately 4.56 mm length and 1.91 mm diameter.

Product Description

Fairchild Semiconductor 1N4148TA is a silicon junction switching diode designed for precise electronic circuit switching applications. It features a small signal configuration with a 2-pin DO-35 through-hole package, providing ease of integration into various electronic designs.

This diode supports a maximum forward current of 400 mA and a maximum repetitive reverse voltage of 100 V, suitable for many low-power switching needs. Its peak non-repetitive forward surge current rating of 4 A allows tolerances for transient currents in circuits.

The device operates reliably across a wide temperature range from -65°C up to 175°C, making it versatile for automotive and industrial applications under varying environmental conditions. The fast 4 ns reverse recovery time improves switching speed and reduces losses in high-frequency circuits.

Physical dimensions include a length of 4.56 mm and a diameter of 1.91 mm, contributing to a compact footprint. The diode complies with automotive standard AEC-Q101, testifying to its quality and suitability in automotive electronics.

Small signal silicon junction diode optimized for switching. Through-hole mount with DO-35 package type. 100 V maximum peak repetitive reverse voltage. 400 mA maximum forward current rating. 4 ns peak reverse recovery time for fast switching.

Wide operating temperature range from -65°C to 175°C. Peak surge forward current of 4 A. Complies with automotive standard AEC-Q101.

This diode is ideal for electronics manufacturing, automotive systems, telecommunications, and general-purpose switching circuits. It ensures consistent switching performance and durability in demanding applications.

Explore more semiconductor devices and quality components in the Electronics & Electricals category at EnvMart for professional industrial and laboratory use.

Explore more products in our Semiconductor Diode category.

Fairchild Semiconductor Silicon Junction Switching Diode 2-Pin DO-35 100 V 400 mA 1N4148TA
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Frequently Asked Questions

The maximum repetitive reverse voltage rating of this diode is 100 V.

It supports a peak non-repetitive forward surge current of up to 4 A.

The maximum forward current rating for this model is 400 mA.

The diode operates reliably across a temperature range from -65°C to 175°C.

The diode has a length of approximately 4.56 mm and a diameter of 1.91 mm.

It uses a DO-35 package type for through-hole mounting.

The reverse recovery time is 4 ns, which enhances its switching speed.

Yes, it complies with the automotive standard AEC-Q101.

The maximum forward voltage drop is 1 V, contributing to its efficient operation.

This model features a single diode configuration.

It is suitable for electronics manufacturing, automotive systems, telecommunications, and general-purpose switching circuits.

The maximum power dissipation for this diode is 500 mW.

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