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Vishay Silicon Small Signal Diode 300 mA, 50 V DO-35 Through Hole 2-Pin 1N4150TR

Category Semiconductor Diode Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.7mm
Length 3.9mm
Model 1N4150TR
Width 1.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type DO-35
Sub Type Silicon Diode
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Small Signal Diode
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Designed for fast switching applications with a reverse recovery time of 4 ns.
  • Operates reliably between -55°C and 175°C.
  • Low forward voltage drop of 1 V supports efficient signal rectification.
  • Through hole mounting with 2 pins and compact dimensions of 3.9 mm length and 1.7 mm diameter.
  • Supports peak non-repetitive forward surge current of 4 A for surge resilience.
  • Power dissipation rated at 500 mW ensuring thermal robustness.
  • Ideal for industrial, computer, microcontroller, and general purpose electronic circuits.
  • No automotive standard certification; conforming to Vishay's quality standards.

Product Description

The Vishay 1N4150TR is a silicon small signal diode designed for fast switching and general purpose applications. It supports a maximum forward current of 300 mA and a peak reverse voltage of 50 V, making it suitable for low voltage signal switching and rectification tasks in semiconductor circuits.

Its DO-35 package type with through hole mount and 2 pins allows easy integration into electronic assemblies. The diode's compact size, with 3.9 mm length and 1.7 mm diameter, fits well in dense circuit boards.

The device features low forward voltage drop of 1 V and a fast peak reverse recovery time of 4 ns, which helps in minimizing switching losses and improving circuit efficiency. It can handle surge currents up to 4 A non-repetitively, ensuring durability during transient conditions.

Operating temperature ranges from -55°C to 175°C ensure wide environmental robustness for industrial and commercial electronics. Typical applications include use in microcontrollers, computer hardware, industrial switching circuits, and general semiconductor devices requiring fast signal handling.

Designed for fast switching applications with a reverse recovery time of 4 ns. Operates reliably between -55°C and 175°C. Low forward voltage drop of 1 V supports efficient signal rectification. Through hole mounting with 2 pins and compact dimensions of 3.9 mm length and 1.7 mm diameter.

Supports peak non-repetitive forward surge current of 4 A for surge resilience. Power dissipation rated at 500 mW ensuring thermal robustness. Ideal for industrial, computer, microcontroller, and general purpose electronic circuits.

No automotive standard certification; conforming to Vishay's quality standards. Explore a wide range of Semiconductor Diodes and switching diodes at EnvMart for your diverse industrial and electronic needs.

Vishay Silicon Small Signal Diode 300 mA, 50 V DO-35 Through Hole 2-Pin 1N4150TR
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Frequently Asked Questions

The maximum forward current of this diode is 300 mA.

The peak reverse voltage rating for the 1N4150TR is 50 V.

The reverse recovery time of this model is 4 ns, making it suitable for fast switching applications.

This diode has a length of 3.9 mm and a diameter of 1.7 mm.

The power dissipation rating for this diode is 500 mW.

The operating temperature range for this model is from -55°C to 175°C.

This diode supports through hole mounting with 2 pins.

The peak non-repetitive forward surge current for this diode is 4 A.

The forward voltage drop for this model is 1 V.

This diode is suitable for industrial, computer, microcontroller, and general purpose electronic circuits.

The 1N4150TR comes in a DO-35 package type.

The diode configuration of this model is a small signal diode.

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