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Nexperia 1-Element Uni-Directional ESD Protection Diode, 45 W, 2-Pin SOD-523 PESD3V3L1UB,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 0.65mm |
| Length | 1.25mm |
| Model | PESD3V3L1UB,115 |
| Width | 0.85mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOD-523 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 11V |
| Automotive Standard | AEC-Q101 |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 5.3V |
| Maximum Reverse Stand-off Voltage Vwm | 3.3V |
| Peak Pulse Power Dissipation Pppm | 45W |
| Maximum Peak Pulse Current Ippm | 4.5A |
| Maximum Reverse Leakage Current | 300nA |
Key Features
- Designed for ultra low capacitance down to 0.4 pF typical for high-speed signal line protection.
- Compact surface-mounted device package ensures minimal PCB area requirement.
- Uni-directional diode configuration with 5.3 V minimum breakdown voltage.
- Supports peak pulse current up to 4.5 A and clamping voltage of 11 V.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Extremely low leakage current of 300 nA ensures high signal integrity.
- Conforms to automotive standard AEC-Q101 ensuring reliability in automotive applications.
- Ideal for industrial, communication, and power electronics ESD and transient voltage protection.
Product Description
Nexperia PESD3V3L1UB,115 1-element uni-directional ESD Protection Diode provides robust transient voltage suppression with a peak pulse power rating of 45 W in a small 2-pin SOD-523 package. It is engineered for protection of high-speed data lines from electrostatic discharge (ESD) and transient voltage spikes.
The diode features an ultra low diode capacitance around 0.4 pF, contributing minimal impact on signal integrity, making it suitable for ultra high-speed applications. The uni-directional configuration supports a minimum breakdown voltage of 5.3 V, with a maximum reverse stand-off voltage of 3.3 V, and a clamping voltage of 11 V to effectively clamp voltage spikes.
This robust component supports a maximum peak pulse current of 4.5 A and operates reliably over a temperature range from -55°C to 150°C, enabling usage in a wide array of industrial, automotive, and consumer electronics environments. Its extremely low leakage current (300 nA max) ensures minimal disruption to circuit operation.
Ultra low capacitance suitable for high-speed signal lines. Compact surface mount SOD-523 package minimizes PCB footprint. Uni-directional diode with 5.3 V breakdown voltage. 45 W peak pulse power dissipation capability.
Wide thermal range from -55°C to 150°C for harsh conditions. Low leakage current maintaining circuit integrity. AEC-Q101 certified for automotive use. Small dimensions: 1.25 mm x 0.85 mm x 0.65 mm.
Manufactured in China, this diode is essential for protecting sensitive electronic circuits from electrostatic discharge and transient events in industrial manufacturing, communications equipment, automotive electronics, consumer devices, and power management systems.
Explore EnvMart’s extensive semiconductor diode catalog to find compatible and complementary components for your electronic and power protection needs.
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Frequently Asked Questions
The peak pulse power rating of this diode is 45 W.
The minimum breakdown voltage for this uni-directional diode is 5.3 V.
The maximum reverse stand-off voltage is 3.3 V.
The clamping voltage of this diode is 11 V.
This model supports a maximum peak pulse current of 4.5 A.
The dimensions of the SOD-523 package are 1.25 mm in length, 0.85 mm in width, and 0.65 mm in height.
The operating temperature range for this diode is from -55°C to 150°C.
The maximum reverse leakage current is 300 nA.
This diode conforms to the automotive standard AEC-Q101.
This diode uses surface mounting.
It is suitable for protecting high-speed data lines in industrial, automotive, and consumer electronics applications.
This diode has 1 element per chip.
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