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Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin UMT PUMD2,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PUMD2,115
Width 1.35mm
Mount Type Surface
Series PUMD2
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature 0°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 230MHz

Key Features

  • Supports a maximum collector emitter voltage of 50 V.
  • Packaged in a 6-pin UMT surface mount package.
  • Features built-in bias resistors for simplified circuit design.
  • Maximum power dissipation of 200 mW suitable for low power applications.
  • Maximum transition frequency is 230 MHz, enabling fast switching.
  • Operating temperature range is from 0°C to 150°C for reliability.
  • Designed as isolated transistor configuration with a minimum DC current gain of 60.
  • Pin count is 6 with package dimensions approx. 2.2 mm (L) x 1.35 mm (W) x 1.1 mm (H).

Product Description

The Nexperia PUMD2,115 is a digital transistor combining NPN and PNP transistors in a 6-pin UMT surface-mounted package, offering a maximum DC collector current of 100 mA and collector emitter voltage of 50 V.

This device has integrated bias resistors, reducing component count and simplifying circuit designs for digital switching applications. It supports a maximum power dissipation of 200 mW, making it suitable for low power peripheral driver functions and control of IC inputs.

With a maximum transition frequency of 230 MHz and a minimum DC current gain (hFE) of 60, the transistor enables efficient high-speed switching. It operates reliably within a temperature range of 0°C to 150°C, complying with RoHS standards and the automotive AEC-Q101 qualification, ensuring automotive-grade dependability.

The compact UMT package measures 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, making it ideal for surface mounting and high-density PCB layouts.

This transistor is designed for applications requiring low current peripheral drivers, IC input control, and replacement of general-purpose transistors in digital electronic systems.

Supports a maximum collector emitter voltage of 50 V. Contains built-in bias resistors for circuit simplification. Maximum power dissipation rated at 200 mW. Maximum transition frequency of 230 MHz for fast switching. Wide operating temperature range of 0°C to 150°C.

Isolated transistor configuration with NPN + PNP polarity. Compact 6-pin UMT surface mount package. Automotive qualification with AEC-Q101 standard.

This product originates from Malaysia and is intended for use in industrial, automotive, consumer electronics, and laboratory applications. For a wide selection of Digital Transistors and semiconductor components, explore the Electronics & Electricals category at EnvMart.

Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin UMT PUMD2,115
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Frequently Asked Questions

The maximum collector emitter voltage for this model is 50 V.

This transistor can handle a maximum DC collector current of 100 mA.

The maximum power dissipation rating is 200 mW, suitable for low power applications.

The maximum transition frequency is 230 MHz, enabling fast switching capabilities.

It operates reliably within a temperature range of 0°C to 150°C.

This model is packaged in a compact 6-pin UMT surface mount package.

Yes, it features built-in bias resistors which simplify circuit design.

The minimum DC current gain (hFE) is 60.

It complies with the automotive AEC-Q101 qualification, ensuring automotive-grade reliability.

This product originates from Malaysia.

It is designed for low current peripheral drivers, IC input control, and replacement of general-purpose transistors in digital electronic systems.

This model features an isolated transistor configuration with both NPN and PNP polarities.

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