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onsemi BD244CG Digital Transistor 100 V PNP Through Hole TO-220 Package, 3-Pin

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 9.28mm
Length 10.53mm
Model BD244CG
Width 4.83mm
Mount Type Through Hole
Series BD244C
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 65W
Transistor Configuration Single

Key Features

  • Rated for a maximum collector emitter voltage of 100 V.
  • Designed with PNP polarity for amplifier and switching applications.
  • Maximum power dissipation of 65 W ensures high power handling.
  • Minimum DC current gain (hFE) of 30 for reliable current amplification.
  • Operates up to a maximum temperature of 150°C for robust performance.
  • Collector emitter saturation voltage max 1.5 V at 6 A current.
  • Three-pin configuration suitable for through hole mounting.
  • Compliant with Pb-Free package requirements.

Product Description

onsemi BD244CG Digital Transistor is a 100 V PNP bipolar power transistor housed in a TO-220 through hole package with 3 pins, intended for general purpose amplifier and switching applications. This transistor offers a maximum collector emitter voltage of 100 V and a power dissipation rating of 65 W, making it suitable for medium power electronic circuits.

Designed for durability, it operates effectively at temperatures up to 150°C. The transistor exhibits a minimum DC current gain (hFE) of 30, ensuring efficient current amplification. Its collector emitter saturation voltage is 1.5 V maximum at 6 A collector current, which assists in minimizing power losses in switching applications.

The device features a single transistor configuration with PNP polarity, compatible with complementary devices like BD243B, BD243C (NPN), BD244B, and BD244C (PNP). The compact TO-220 package measures 10.53 mm in length, 4.83 mm in width, and 9.28 mm in height, making it ideal for through hole mounting on printed circuit boards.

This transistor is lead-free (Pb-Free), supporting environmental compliance. It is manufactured in China and typically used in electronics, power supplies, amplifier circuits, and switching devices in industrial and commercial settings.

Rated for a maximum collector emitter voltage of 100 V for transistor protection. Maximum power dissipation of 65 W supports medium power applications. PNP transistor polarity suitable for various amplifier designs. Compact TO-220 package ensures reliable heat dissipation.

Designed to operate at temperatures up to 150°C for industrial environments. Low collector emitter saturation voltage reduces energy losses. Three-pin single transistor configuration allows easy integration. Pb-Free package complies with environmental standards.

The onsemi BD244CG transistor is widely used across electronic circuit designs requiring PNP bipolar transistors with robust power handling and efficient amplification. Explore more in Semiconductor Transistors category on EnvMart for comprehensive power transistor solutions.

onsemi BD244CG Digital Transistor 100 V PNP Through Hole TO-220 Package, 3-Pin
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