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onsemi Digital Transistor PNP 3-Pin Surface Mount SOT-723, -50 V Vceo, 338 mW Power Dissipation DTA114EM3T5G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.9mm
Model DTA114EM3T5G
Width 1.6mm
Mount Type Surface
Series DTA114EM3
Maximum Operating Temperature 150°C
Package Type SOT-723
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 338mW
Transistor Configuration Single

Key Features

  • This single transistor configuration integrates dual resistors for digital driving.
  • The device supports a maximum collector-base voltage of 100 V.
  • It offers a minimum DC current gain (hFE) of 200.
  • Maximum emitter-base voltage rating is 6 V, ensuring robust operation.
  • The transistor has a compact size with dimensions 2.9 mm length, 1.6 mm width, and 0.9 mm height.
  • Designed for surface mount applications in electronic circuits.
  • Its maximum operating temperature rating is 150°C, suitable for demanding environments.
  • Three-pin configuration makes it easy to integrate into printed circuit boards.

Product Description

onsemi DTA114EM3T5G Digital Transistor is a high performance PNP bipolar transistor designed for surface mount technology applications in electronic circuits. Packaged in a SOT-723 casing, it measures 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height, making it ideal for compact PCB layouts.

This device incorporates dual integrated resistors which simplify interfacing with digital circuits by allowing direct drive from logical signals. The transistor is rated for a maximum collector-emitter voltage of -50 V, ensuring reliable switching capabilities in various industrial and consumer electronic applications.

The DTA114EM3T5G offers a minimum DC current gain (hFE) of 200 and supports a maximum collector-base voltage of 100 V, emphasizing stable amplification performance. Its maximum emitter-base voltage is 6 V, and it dissipates power up to 338 mW continuously.

With a maximum operating temperature of 150°C, this transistor withstands elevated thermal environments encountered in manufacturing, automation, and power control systems. The three-pin package allows for ease of use in automated PCB assembly processes.

This transistor provides excellent integration for digital switching and amplification tasks. The compact SOT-723 package supports surface mount assembly and space-saving designs. Robust voltage and current characteristics make it suitable for industrial and consumer electronics.

High current gain ensures efficient transistor operation and signal amplification. Thermal stability rated up to 150°C for demanding application environments. Dual resistor integration minimizes external component count and simplifies circuit design.

Perfect for use in automation, power electronics, and communication devices.

Choose onsemi DTA114EM3T5G Digital Transistor for reliable, compact, and efficient transistor solutions. This product is ideal for engineers and manufacturers focused on precision electronic componentry for industrial and consumer applications. Explore the complete range of semiconductor devices in this category at EnvMart.

onsemi Digital Transistor PNP 3-Pin Surface Mount SOT-723, -50 V Vceo, 338 mW Power Dissipation DTA114EM3T5G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for the DTA114EM3T5G is -50 V.

This transistor has a maximum power dissipation rating of 338 mW.

The dimensions of this model are 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height.

The minimum DC current gain (hFE) for the DTA114EM3T5G is 200.

The maximum operating temperature for this model is 150°C.

The DTA114EM3T5G comes in a SOT-723 package type.

The maximum emitter-base voltage (VEBO) rating for this model is 6 V.

This transistor has a 3-pin configuration.

The transistor polarity for this model is PNP.

The DTA114EM3T5G is suitable for applications in automation, power electronics, and communication devices.

The dual resistor integration in this transistor simplifies interfacing with digital circuits by allowing direct drive from logical signals, reducing the external component count.

The DTA114EM3T5G is manufactured in India.

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