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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1mm |
| Length | 2.2mm |
| Model | EMD38T2R |
| Width | 2.1mm |
| Mount Type | Surface |
| Package Type | SOT-563 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 30 |
| Maximum Power Dissipation Pd | 0.15W |
The ROHM EMD38T2R is a dual NPN/PNP digital transistor designed specifically for surface mount technology (SMT) applications. It comes in a compact SOT-563 package with six pins, measuring 2.2 mm in length, 2.1 mm in width, and 1.0 mm in height. This transistor supports a maximum collector-emitter voltage of 50 V and has a maximum power dissipation of 0.15 W, making it suitable for a variety of low-power electronic switching and amplification tasks.
This digital transistor is ideal for use in industrial electronics, consumer devices, and general purpose circuit boards where size and performance efficiency are critical. It features separate transistor elements to eliminate interface issues, thereby reducing mounting costs and the required PCB area by half.
With a minimum DC current gain (hFE) value of 30, the EMD38T2R offers dependable performance for digital switching applications. Its storage temperature range from -55°C up to 150°C ensures stability and reliability even in demanding environments.
It is functionally equivalent to the DTA113Z and DTC114Y transistors, providing a convenient option for replacement or design upgrade purposes. The product does not include automotive or other certifications, positioning it well for standard industrial, laboratory, consumer electronics, and HVAC applications where digital transistors are required.
The device is a dual NPN/PNP digital transistor suitable for surface mount applications. Maximum power dissipation is 0.15 W allowing efficient operation under moderate load. Pin count of 6 facilitates integration in compact circuit designs.
Package dimensions include 2.2 mm length, 2.1 mm width, and 1.0 mm height for space-saving PCB layouts. Minimum DC current gain (hFE) of 30 ensures reliable switching and amplification performance. Storage temperature range accommodates -55°C to 150°C ensuring durability in harsh environments.
Equivalent to DTA113Z / DTC114Y transistors, allowing easy replacement if needed. Independent transistor elements reduce interface cost and PCB area requirements. No automotive or specialized approvals; general purpose for electronic and electrical applications.
This product is essential for electronics manufacturers and designers working on SMT-based digital circuits requiring efficient, compact transistor components. Explore ROHM Digital Transistor offerings on EnvMart for enhanced semiconductor solutions.
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