ROHM Dual PNP Digital Transistor 6-Pin SOT-563 Surface Mount, -50 V, 100 mA, 150 mW EMB52T2R

ROHM EMB52T2R Digital Transistor is a dual PNP device in a compact 6-pin SOT-563 surface mount package, tailored for applications demanding efficient space utilization and reliable performance.

This transistor supports a maximum collector emitter voltage of -50 V and a maximum collector base voltage of 50 V, with a continuous collector current rating of 100 mA and power dissipation of 150 mW. The dual transistor elements function independently, allowing reduced mounting costs and area on the PCB, enhancing design efficiency.

The minimum DC current gain (hFE) of 80 ensures sufficient signal amplification for digital switching and amplification circuits. Its surface mount design facilitates automated assembly and compact layouts.

With operating temperatures up to 150°C and package dimensions of 1.7 mm by 1.7 mm by 0.55 mm, the EMB52T2R is suitable for industrial electronics, consumer devices, and telecommunications where size and reliability matter.

This transistor supports a maximum collector emitter voltage of -50 V. Maximum continuous collector current is rated at 100 mA. Power dissipation rating of 150 mW. Dual independent PNP transistor configuration. Minimum DC current gain (hFE) of 80.

6-pin SOT-563 surface mount package. Operating temperature up to 150°C. Compact dimensions: 1.7 mm length, 1.7 mm width, 0.55 mm height. Equivalent to DTA044E for design flexibility. Ideal for industrial and electronic component applications.

This product is designed for integration into electronic circuits requiring bipolar transistors with dual PNP configuration and compact form factor. It is commonly used in telecommunications, industrial automation, and consumer electronics assemblies.

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