onsemi Digital Transistor 80 V DC NPN Through Hole TO-220 3-Pin BDX53BG

onsemi BDX53BG is a high-performance digital transistor featuring an 80 V DC rating, NPN polarity, and housed in a TO-220 through-hole 3-pin package. This transistor is engineered for general-purpose and low-speed switching applications in various industrial and electronic semiconductor environments.

The device supports a maximum collector-emitter voltage (Vceo) of 80 V DC and a maximum collector-base voltage (Vcbo) of 80 V DC, making it reliable for medium-voltage electronic circuits. It offers a maximum power dissipation of 65 W, supporting higher power switching and amplification.

Designed as a single transistor configuration with NPN polarity, it provides a minimum DC current gain (hFE) of 750, ensuring efficient current amplification. The transistor operates safely at temperatures up to 150°C, suitable for demanding applications.

The compact TO-220AB package measures approximately 10.53 mm in length, 9.28 mm in height, and 4.83 mm in width, facilitating easy through-hole mounting with reliable heat dissipation characteristics.

This product is manufactured in China and does not have automotive certification or special standards approvals, indicating it is suitable for general electronic components and power and connector systems.

Maximum collector emitter voltage: 80 V DC. Maximum collector base voltage: 80 V DC. Maximum power dissipation: 65 W. Operating temperature up to 150°C. High current gain with minimum DC gain hFE of 750. Compact TO-220 through-hole 3-pin package design.

Designed for general purpose and low-speed switching applications. NPN transistor polarity in single configuration. Maximum emitter base voltage of 5 V DC. Origin: China.

This transistor serves a wide range of industrial, electronics, and semiconductor applications, including power control and amplification circuits. For additional designs and mechanical integrations, users can access 3D models and schematics through accompanying design software platforms. Ensure compatibility with systems requiring TO-220 package transistors rated at 80 V and 65 W power dissipation.

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