World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

IXYS HiperFET Polar N-Channel MOSFET 36 A 500 V Enhancement 3-Pin TO-247 IXFH36N50P

Free Delivery in India | Lowest Global Shipping Charges

IXYS HiperFET Polar N-Channel MOSFET 36 A 500 V Enhancement 3-Pin TO-247 IXFH36N50P

Name: IXYS HiperFET Polar N-Channel MOSFET 36 A 500 V Enhancement 3-Pin TO-247 IXFH36N50P
Brand: IXYS
SKU: 148391
Price: 10.23 USD
Availability: InStock



Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH36N50P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	36A
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	170mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	540W
Typical Gate Charge Qg @ Vgs	93nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V
IRFPS37N50A, N-Channel MOSFET Transistor 36A 500V, 3-Pin Super-247Brand	Vishay

Key Features

Designed with the HiperFET Polar series for high performance and fast switching.
Features enhancement mode operation with a low drain-source resistance of 170 mΩ.
Encapsulated in a 3-pin TO-247 package suitable for through-hole mounting.
Maximum power dissipation is rated at 540 W with a typical gate charge of 93 nC.
Operates reliably in temperatures ranging from -55°C to 150°C.
Maximum gate-source voltage ranges between -30 V and +30 V.
Forward voltage drop is 1.5 V ensuring efficient conduction.
Does not conform to any automotive standard or specific certifications.

Product Description

The IXYS IXFH36N50P is a high-performance N-Channel Power MOSFET from the HiperFET Polar series. Engineered for efficient power switching applications, this device supports a maximum continuous drain current of 36 A and a maximum drain-source voltage of 500 V. The MOSFET operates in enhancement mode, providing a low drain-source resistance of 170 mΩ which aids in reducing conduction losses.

Housed in a durable 3-pin TO-247 package, it is designed for through-hole mounting, facilitating easy integration on printed circuit boards. Its maximum power dissipation capability is rated at 540 W, making it suitable for high-power industrial and electronic applications.

With operating temperature tolerance from -55°C to 150°C, the IXFH36N50P is reliable under challenging environments. The typical gate charge of 93 nC supports fast switching speeds critical for efficient power management. Additionally, the gate-source voltage range of -30 V to +30 V adds to its robustness during operation.

The device features a forward voltage drop of 1.5 V, optimizing power efficiency in circuits. Its compact dimensions - 21.46 mm height, 16.26 mm length, and 5.3 mm width - allow it to be used in space-constrained electronic systems.

This product is ideal for industrial electronics, power management in manufacturing equipment, and laboratory power supplies. The IXYS HiperFET Polar MOSFETs are known for their fast intrinsic body diode and high ruggedness, enhancing their suitability for demanding power switching roles.

Designed for high-performance switching with low Rds(on). High power dissipation capacity ensures reliability in power circuits. Wide operating temperature range allows use in harsh environments. Compact TO-247 packaging for versatile mounting options.

Fast switching capability due to optimized gate charge. Robust gate voltage tolerance enhances device durability. Typical forward voltage drop minimizes conduction losses. IXYS brand ensures quality and advanced semiconductor technology.

Explore IXYS products and other MOSFET solutions on EnvMart for optimized electronic components tailored to your industrial and electronic design needs.