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IXYS HiperFET Polar N-Channel MOSFET 74 A, 200 V Enhancement 3-Pin TO-247 IXFH74N20P

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IXYS HiperFET Polar N-Channel MOSFET 74 A, 200 V Enhancement 3-Pin TO-247 IXFH74N20P

Name: IXYS HiperFET Polar N-Channel MOSFET 74 A, 200 V Enhancement 3-Pin TO-247 IXFH74N20P
Brand: IXYS
SKU: 148345
Price: 7.4 USD
Availability: InStock

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Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH74N20P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	74A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	34mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	480W
Typical Gate Charge Qg @ Vgs	107nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V
N-Channel MOSFET Transistor, 76 A, 70 V, 3-Pin TO-247AD IXYS IXFH76N07-11Brand	IXYS

Key Features

Durable 3-pin TO-247 package designed for through-hole mounting.
Maximum power dissipation of 480W ensures high efficiency in power applications.
Features a low 34mΩ maximum drain-source resistance for effective conductivity.
Supports an operating temperature range from -55°C up to 175°C for rugged environments.
Equipped with a fast intrinsic diode enhancing switching speed.
Typical gate charge of 107nC for optimized gate control.
Maximum gate-source voltage rating of -20V to +20V protects against voltage spikes.
Compact dimensions of 21.46mm height, 16.26mm length, and 5.3mm width.

Product Description

IXYS IXFH74N20P is a HiperFET Polar Series N-Channel MOSFET featuring 74 A maximum continuous drain current and 200 V maximum drain-source voltage in a 3-pin TO-247 package suitable for through-hole mounting. It supports enhancement channel mode operation and delivers efficient power dissipation up to 480 W, making it ideal for high-power electronic circuits.

This MOSFET includes a fast intrinsic diode designed to improve switching performance and reduce energy loss. With a low maximum drain-source resistance of 34 mΩ, it provides excellent conduction efficiency and thermal performance. The gate can tolerate voltages up to ±20 V, and the typical gate charge value of 107 nC ensures fast switching response.

The device operates reliably in temperatures ranging from -55°C to 175°C, suitable for industrial and automotive environments, although it does not have specific automotive certification. Its compact size (21.46 mm height, 16.26 mm length, and 5.3 mm width) allows flexible integration in various electronic assemblies.

Common applications include power management, motor control, and switching in industrial and laboratory electronic circuits. The robust design allows it to be used in high-power electronics requiring efficient heat dissipation and high current capabilities.

Durable 3-pin TO-247 package designed for through-hole mounting. Maximum power dissipation of 480 W ensures efficient thermal handling. Low maximum drain-source resistance of 34 mΩ improves conduction. Wide operating temperature range from -55°C to 175°C ensures reliability.

Fast intrinsic diode supports swift switching capabilities. Typical gate charge of 107 nC for precise gate control. Maximum gate-source voltage of ±20 V protects the device. Compact physical dimensions enable versatile application integration.

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