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Infineon IAUC N-Channel MOSFET 120 A 40 V Enhancement Mode 8-Pin TDSON IAUC120N04S6L012ATMA1

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Infineon IAUC N-Channel MOSFET 120 A 40 V Enhancement Mode 8-Pin TDSON IAUC120N04S6L012ATMA1

Name: Infineon IAUC N-Channel MOSFET 120 A 40 V Enhancement Mode 8-Pin TDSON IAUC120N04S6L012ATMA1
Brand: Infineon
SKU: 178317

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IAUC120N04S6L012ATMA1
Mount Type	Surface
Series	IAUC
Maximum Operating Temperature	175°C
Package Type	TDSON
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Features an 8-pin TDSON package for surface mounting applications.
Supports maximum continuous drain current of 120 A at 40 V maximum drain-source voltage.
Enhancement mode channel for efficient switching operations.
Maximum drain-source resistance is 0.7 milliohm ensuring low conduction losses.
Typical gate charge of 80 nanocoulombs enabling fast switching speeds.
Maximum power dissipation rated at 81 W for reliable thermal performance.
Operates within a temperature range of -55°C to 175°C for harsh environments.
Complies with RoHS and automotive standard AEC-Q101 for quality assurance.

Product Description

Infineon IAUC120N04S6L012ATMA1 is a high current, low voltage N-channel power MOSFET designed specifically for automotive and industrial applications requiring high efficiency and reliability. It features an 8-pin TDSON surface mount package and uses enhancement mode channel technology optimized for switching and power management.

This MOSFET supports a maximum continuous drain current of 120 A with a maximum drain-source voltage of 40 V. The device exhibits an exceptionally low maximum drain-source resistance of 0.7 milliohms, contributing to reduced conduction losses and improved efficiency in power circuits.

The typical gate charge is 80 nanocoulombs, enabling fast switching speeds suitable for power conversion and motor control. It can dissipate up to 81 W of power, making it suitable for demanding thermal conditions. The component is built to withstand operating temperatures from -55°C up to 175°C, ensuring robustness in automotive and industrial environments.

Certified to the RoHS directive and automotive standard AEC-Q101, this Infineon OptiMOS 6 transistor is 100% avalanche tested for safe operation under fault conditions. Its surface-mount TDSON package supports compact PCB design for modern electronic assemblies.

8-pin TDSON package for reliable surface mounting. High continuous drain current rating of 120 A. Low Rds(on) of 0.7 mΩ for efficiency. Operating temperature range from -55°C to 175°C. Compliant with RoHS and automotive AEC-Q101 standards.

Typical gate charge supports rapid switching. Maximum power dissipation of 81 W. Enhancement mode N-channel MOSFET technology.

This MOSFET is ideal for automotive power electronics, industrial control systems, and other applications requiring high current switching devices with robust operating conditions. Its qualified manufacturing and testing ensure dependable performance across a wide range of temperatures and usage scenarios.

Explore more Infineon advanced semiconductors and power devices in EnvMart’s Electronics & Electricals category for industrial and electronic component needs.