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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC120N04S6L012ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon IAUC120N04S6L012ATMA1 is a high current, low voltage N-channel power MOSFET designed specifically for automotive and industrial applications requiring high efficiency and reliability. It features an 8-pin TDSON surface mount package and uses enhancement mode channel technology optimized for switching and power management.
This MOSFET supports a maximum continuous drain current of 120 A with a maximum drain-source voltage of 40 V. The device exhibits an exceptionally low maximum drain-source resistance of 0.7 milliohms, contributing to reduced conduction losses and improved efficiency in power circuits.
The typical gate charge is 80 nanocoulombs, enabling fast switching speeds suitable for power conversion and motor control. It can dissipate up to 81 W of power, making it suitable for demanding thermal conditions. The component is built to withstand operating temperatures from -55°C up to 175°C, ensuring robustness in automotive and industrial environments.
Certified to the RoHS directive and automotive standard AEC-Q101, this Infineon OptiMOS 6 transistor is 100% avalanche tested for safe operation under fault conditions. Its surface-mount TDSON package supports compact PCB design for modern electronic assemblies.
8-pin TDSON package for reliable surface mounting. High continuous drain current rating of 120 A. Low Rds(on) of 0.7 mΩ for efficiency. Operating temperature range from -55°C to 175°C. Compliant with RoHS and automotive AEC-Q101 standards.
Typical gate charge supports rapid switching. Maximum power dissipation of 81 W. Enhancement mode N-channel MOSFET technology.
This MOSFET is ideal for automotive power electronics, industrial control systems, and other applications requiring high current switching devices with robust operating conditions. Its qualified manufacturing and testing ensure dependable performance across a wide range of temperatures and usage scenarios.
Explore more Infineon advanced semiconductors and power devices in EnvMart’s Electronics & Electricals category for industrial and electronic component needs.
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