Vishay Type N-Channel TrenchFET Power MOSFET 30 A, 30 V, Enhancement Mode, 8-Pin SOIC SI4164DY-T1-GE3

Vishay SI4164DY-T1-GE3 is a Type N-Channel TrenchFET Power MOSFET engineered for advanced power electronics applications. It provides a maximum continuous drain current capability of 30 A and a maximum drain-source voltage of 30 V. The device operates in enhancement mode with an ultra-low drain-source resistance of 0.0032 ohms, which minimizes conduction losses and improves overall system efficiency. Housed in a standard 8-pin SOIC surface mount package measuring 5 mm in length, 4 mm in width, and 1.55 mm in height, it is well suited for compact PCB designs requiring high power density.

Thermally, the MOSFET supports a maximum power dissipation of 6 W and can reliably operate across a wide ambient temperature range from -55°C to 150°C, making it suitable for use in industrial, automotive, communication, and power management systems. The device features a typical gate charge of 26.5 nC at gate-source voltage levels that optimize switching performance while reducing switching losses. Maximum gate-source voltage tolerance is 20 V, providing safety margin for transient conditions.

Compliant with JEDEC JS709A standards and RoHS environmental requirements, the SI4164DY-T1-GE3 MOSFET is a trusted component for designers seeking quality and reliability in power switching applications. The forward voltage of approximately 0.72 V ensures efficient load driving capability.

Supports a maximum continuous drain current of 30 A ensuring robust current handling. Operates with a maximum drain-source voltage of 30 V suitable for moderate voltage circuits. Features an enhancement mode channel with low drain-source resistance of 0.0032 ohms for high efficiency.

Comes in an 8-pin SOIC surface mount package with compact dimensions of 5 mm length, 4 mm width, and 1.55 mm height. Maximum power dissipation rating is 6 W, supporting thermal reliability in demanding environments. Includes a typical gate charge of 26.5 nC at Vgs to optimize switching speed and energy consumption.

Can withstand gate-source voltages up to 20 V, enhancing device robustness. Designed for operation over a temperature range from -55°C to +150°C ensuring reliable performance. Complies with JEDEC JS709A standards and RoHS directives for quality and environmental safety.

The MOSFET exhibits forward voltage of 0.72 V suitable for efficient conduction.

This MOSFET is ideal for applications in industrial automation, power supplies, motor drives, automotive electronics, and communication systems where reliable and efficient power switching is critical. Vishay's commitment to quality and innovation ensures this transistor meets demanding electrical and thermal requirements.

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