onsemi PowerTrench N-Channel MOSFET 170 mA 100 V Enhancement Mode 3-Pin SOT-23 BSS123LT1G

onsemi BSS123LT1G is a PowerTrench N-Channel MOSFET designed for switching and amplification in electronic circuits requiring up to 170 mA drain current and 100 V voltage rating. Packaged in a compact SOT-23 3-pin surface mount format, this transistor offers efficient switching performance with low on-resistance, making it suitable for industrial, consumer electronics, and automotive applications.

The device features enhancement mode channel operation, allowing it to stay off without gate voltage applied, and a maximum power dissipation of 225 mW to handle moderate load conditions safely. The wide operating temperature range from -55°C to 150°C permits use in harsh environments such as industrial controls and automotive subsystems.

The BSS123LT1G MOSFET has a typical gate charge of 160 nC and a maximum gate-source voltage tolerance of ±20 V, facilitating rapid switching and robust gate drive control. Its low forward voltage drop of 1.2 V further improves circuit efficiency.

This MOSFET is ideal for applications in industrial power management, signal switching, low-power DC-DC converters, and embedded control systems where size and efficiency are critical. The small form factor helps in dense PCB designs.

Key features such as low drain-source resistance and surface-mount packaging support increased production efficiency in manufacturing electronic assemblies. As a product under the onsemi brand PowerTrench series, it provides reliable and consistent performance consistent with semiconductor industry standards.

Features an enhancement mode N-Channel configuration for efficient switching. Maximum continuous drain current of 170 mA suitable for low power applications. Drain-source voltage rating up to 100 V ensures reliability in diverse circuits.

Small surface-mount SOT-23 package with 3 pins for compact PCB layout. Low drain-source resistance of 6 Ohms to reduce power losses. Maximum power dissipation of 225 mW ensures safe operation within thermal limits. Wide operating temperature range from -55°C to 150°C for industrial environments.

Typical gate charge of 160 nC enables fast switching characteristics. Maximum gate-source voltage of ±20 V for robust gate drive tolerance. Explore more semiconductor and MOSFET products in the Electronics & Electricals category at EnvMart for industrial, laboratory, and commercial applications.

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