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Infineon CoolMOS N-Channel MOSFET & Diode 99.6 A 650 V Enhancement 3-Pin TO-247 IPW65R110CFDAFKSA1

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Infineon CoolMOS N-Channel MOSFET & Diode 99.6 A 650 V Enhancement 3-Pin TO-247 IPW65R110CFDAFKSA1

Name: Infineon CoolMOS N-Channel MOSFET & Diode 99.6 A 650 V Enhancement 3-Pin TO-247 IPW65R110CFDAFKSA1
Brand: Infineon
SKU: 170875
Price: 5.81 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	21.1mm
Length	16.13mm
Model	IPW65R110CFDAFKSA1
Width	5.21mm
Mount Type	Through Hole
Series	CoolMOS
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	99.6A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	110mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	277.8W
Typical Gate Charge Qg @ Vgs	118nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

High voltage 650 V CoolMOS CFDA Super junction MOSFET technology.
Maximum continuous drain current of 99.6 amperes ensures robust power handling.
Integrated fast body diode reduces voltage overshoot and switching losses.
Low gate charge of 118 nC for efficient switching performance.
Through-hole mount type with TO-247 3-pin package for easy PCB integration.
Maximum power dissipation of 277.8 W supports high power applications.
Operating temperature range from -40°C to 150°C for reliability in harsh conditions.
Maximum drain-source resistance of 110 milliohms supports low conduction losses.

Product Description

Infineon's IPW65R110CFDAFKSA1 is a high performance CoolMOS N-Channel MOSFET & Diode designed for power semiconductor applications requiring robust current and voltage capabilities. Featuring a maximum continuous drain current of 99.6 A and a drain-source voltage rating of 650 V, this device utilizes the second-generation automotive qualified CoolMOS CFDA Super junction technology.

The 3-pin TO-247 through-hole package facilitates secure mounting and strong thermal dissipation, making it suitable for industrial, automotive, and power conversion applications. The integrated fast body diode reduces voltage overshoot during hard commutation through self-limiting di/dt and dv/dt, enhancing reliability and minimizing electromagnetic interference (EMI).

Key electrical attributes include a low typical gate charge of 118 nC at the gate-source voltage, and a forward diode voltage of 900 mV, offering excellent switching speed and efficiency. Its maximum power dissipation is 277.8 W, supporting high power operation with reduced conduction losses due to a maximum drain-source resistance of 110 mΩ.

Operating efficiently at temperatures ranging from -40°C to 150°C, this MOSFET offers an increased safety margin with higher breakdown voltage, enabling applications in harsh environments. The enhancement-mode channel and 20 V maximum gate-source voltage further allow controlled switching performance.

This MOSFET and diode combination is ideal for use in industrial power modules, automotive power management systems, and other high-voltage applications requiring durable and efficient switching components.

High voltage 650 V CoolMOS CFDA Super junction MOSFET technology. Maximum drain current rating of 99.6 A. Integrated fast body diode for improved switching reliability. Low gate charge and reduced switching losses. Through-hole mounting in TO-247 package.

Wide operating temperature range of -40°C to 150°C. Maximum power dissipation of 277.8 W. Maximum drain-source resistance of 110 mΩ. Enhancement-mode with 20 V gate-source voltage. Forward diode voltage of 900 mV. Discover more high-quality Semiconductors and MOSFET devices on EnvMart for your electronic and power management needs.

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