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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV40UN2R |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PMV40UN2 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Nexperia PMV40UN2R is a high-performance N-Channel MOSFET transistor supplied in a compact 3-pin SOT-23 surface mount package. It supports a continuous drain current of 4.4 amperes and withstands a maximum drain-source voltage of 30 volts. This enhancement-mode MOSFET is engineered for low resistance switching with a typical drain-source resistance Rds(on) of 44 milliohms, which translates to high efficiency and reduced power losses in electronic circuits.
The device features a typical gate charge of 7 nanocoulombs at 4.5 V gate-source voltage, aiding in fast switching transitions suitable for power management, signal switching, and low voltage loads. Its operating temperature range is from -55°C to 150°C, making it suitable for industrial and automotive grade applications where temperature variability is expected.
The PMV40UN2R MOSFET is ideal for a wide range of applications including power supply control, load switching, signal amplification, and other electronic systems requiring a reliable N-channel switching component with low gate drive power.
With a maximum power dissipation rated at 5 watts and a forward voltage of 1.2 volts, it ensures robust operational stability within specified electrical limits. The compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate integration into space-constrained circuit boards, while the 3-pin configuration supports easy surface mounting and soldering.
Surface mount device with SOT-23 package for compact designs. Maximum continuous drain current of 4.4 amperes ensures reliable operation. Low drain-source resistance of 44 milliohms minimizes power losses. Typical gate charge of 7 nanocoulombs supports fast switching speeds.
Designed for operation from -55°C to 150°C for diverse environments. Enhancement mode channel with N-type to support standard MOSFET applications. Maximum power dissipation rating of 5 watts for robust performance. Voltage ratings of 30 V drain-source and ±12 V gate-source for versatile control.
This Nexperia PMV40UN2R MOSFET is widely used in electronics, power management, industrial control systems, and automotive electronics, catering to professional engineers and manufacturers seeking efficient switching performance. Explore more semiconductor and MOSFET options within EnvMart's trusted technology product catalog.
Explore more products in our MOSFETs category.
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