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Nexperia N-Channel MOSFET 4.4 A 30 V Enhancement Surface Mount 3-Pin SOT-23 PMV40UN2R

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model PMV40UN2R
Width 1.4mm
Mount Type Surface
Series PMV40UN2
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 44mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 5W
Typical Gate Charge Qg @ Vgs 7nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 1.2V

Key Features

  • Surface mount device with SOT-23 package for compact designs.
  • Maximum continuous drain current of 4.4 amperes ensures reliable operation.
  • Low drain-source resistance of 44 milliohms minimizes power losses.
  • Typical gate charge of 7 nanocoulombs supports fast switching speeds.
  • Designed for operation from -55°C to 150°C for diverse environments.
  • Enhancement mode channel with N-type to support standard MOSFET applications.
  • Maximum power dissipation rating of 5 watts for robust performance.

Product Description

Nexperia PMV40UN2R is a high-performance N-Channel MOSFET transistor supplied in a compact 3-pin SOT-23 surface mount package. It supports a continuous drain current of 4.4 amperes and withstands a maximum drain-source voltage of 30 volts. This enhancement-mode MOSFET is engineered for low resistance switching with a typical drain-source resistance Rds(on) of 44 milliohms, which translates to high efficiency and reduced power losses in electronic circuits.

The device features a typical gate charge of 7 nanocoulombs at 4.5 V gate-source voltage, aiding in fast switching transitions suitable for power management, signal switching, and low voltage loads. Its operating temperature range is from -55°C to 150°C, making it suitable for industrial and automotive grade applications where temperature variability is expected.

The PMV40UN2R MOSFET is ideal for a wide range of applications including power supply control, load switching, signal amplification, and other electronic systems requiring a reliable N-channel switching component with low gate drive power.

With a maximum power dissipation rated at 5 watts and a forward voltage of 1.2 volts, it ensures robust operational stability within specified electrical limits. The compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate integration into space-constrained circuit boards, while the 3-pin configuration supports easy surface mounting and soldering.

Surface mount device with SOT-23 package for compact designs. Maximum continuous drain current of 4.4 amperes ensures reliable operation. Low drain-source resistance of 44 milliohms minimizes power losses. Typical gate charge of 7 nanocoulombs supports fast switching speeds.

Designed for operation from -55°C to 150°C for diverse environments. Enhancement mode channel with N-type to support standard MOSFET applications. Maximum power dissipation rating of 5 watts for robust performance. Voltage ratings of 30 V drain-source and ±12 V gate-source for versatile control.

This Nexperia PMV40UN2R MOSFET is widely used in electronics, power management, industrial control systems, and automotive electronics, catering to professional engineers and manufacturers seeking efficient switching performance. Explore more semiconductor and MOSFET options within EnvMart's trusted technology product catalog.

Explore more products in our MOSFETs category.

Nexperia N-Channel MOSFET 4.4 A 30 V Enhancement Surface Mount 3-Pin SOT-23 PMV40UN2R
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