STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 6.5A 1kV Enhancement 3-Pin TO-220 STF8NK100Z

STMicroelectronics STF8NK100Z is a high-performance N-Channel MDmesh™ SuperMESH™ MOSFET designed for power switching and amplification applications requiring up to 6.5 amperes continuous drain current and a drain-source voltage of 1 kV. Packaged in a 3-pin TO-220 through-hole format, this device provides robust performance with an enhancement-mode N-type channel.

The MOSFET exhibits a maximum power dissipation rating of 40 watts, making it suitable for industrial, electronic, and power management circuits that operate under moderate power and thermal requirements. Its typical gate charge of 102nC at the gate-source voltage threshold results in efficient switching and reduced losses, optimizing power efficiency.

Engineered for reliability, STF8NK100Z is rated for operating temperatures from -55°C to 150°C, allowing it to be used in diverse environments including automotive electronic systems and industrial machinery power modules. The device’s maximum drain-source resistance of 1.85 ohms ensures low conduction losses and stable operation under load.

The component supports a wide gate-source voltage swing from -30V to +30V, enabling flexible gate drive circuits. Its compact TO-220 form factor with dimensions 10.4 mm length, 16.4 mm height, and 4.6 mm width ensures straightforward assembly into through-hole PCBs and heat sinks for thermal management.

Continuous drain current rating of 6.5 A for high load capacity. Drain-source voltage maximum of 1,000 V suitable for high voltage applications. Enhancement mode N-Channel for efficient transistor switching. Power dissipation capacity of 40 W for stable thermal operation.

Wide operating temperature range from -55°C to 150°C for diverse environments. Through-hole mount in TO-220 package for ease of use in industrial boards. Low maximum Rds(on) of 1.85 Ω to minimize energy loss. Rated gate-source voltage limits of -30 V to +30 V for gate control flexibility.

Compact dimensions optimize PCB layout and assembly.

This MOSFET is ideal for applications in power electronics, industrial controls, and automotive electronics where high-voltage and high-current handling are essential. Integration into power switching units and electronic motor controllers benefits from the reliable packaging and robust electrical specifications.

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