DiodesZetex N-Channel MOSFET 3.1 A 20 V Surface Mount SOT-323 Package DMN2055UWQ-7

DiodesZetex DMN2055UWQ-7 is a high-performance N-Channel MOSFET designed for enhancement mode switching in electronic circuits. It features a maximum continuous drain current of 3.1 A and a drain-source voltage up to 20 V, making it suitable for a wide range of power management applications.

This MOSFET utilizes a small and compact 3-pin SOT-323 surface mount package, allowing integration into space-constrained electronic designs. With a maximum drain-source resistance of 460 milliohms, it offers efficient conduction and low power loss.

The device dissipates up to 0.65 watts of power and operates reliably in harsh temperature conditions ranging from -55°C up to 150°C. Its typical gate charge of 4.3 nC enables fast switching speeds, ideal for efficient control of power in circuits such as interfacing switches and analog switching applications.

The DMN2055UWQ-7 adheres to automotive-grade standards with an AEC-Q101 qualification, ensuring robustness and reliability in automotive and industrial environments. Additional electrical parameters include a maximum gate-source voltage of 8 V and a forward voltage drop of 1 V.

Its compact dimensions (2.15 mm length, 1.3 mm width, and 1 mm height) support dense PCB layouts and miniaturized device assemblies. This MOSFET is well suited for use in industrial electronics, automotive systems, power management units, and other electronic component applications requiring reliable discrete semiconductor devices.

Compact 3-pin SOT-323 surface mount package. Low on-resistance and efficient switching performance. Wide operating temperature range, suitable for harsh conditions. Fast switching enabled by low gate charge. Compliance with automotive AEC-Q101 standard.

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