STMicroelectronics STripFET N-Channel MOSFET 30 A 200 V Enhancement 3-Pin TO-220 STP30NF20

STMicroelectronics STP30NF20 is an N-Channel STripFET™ MOSFET designed for power switching applications requiring high current and voltage capabilities. It features a robust enhancement mode channel construction and is housed in a durable three-pin TO-220 through-hole package.

This transistor supports a maximum continuous drain current of 30 A and a drain-source voltage of 200 V, making it suitable for a wide range of power management circuits, motor drives, and power supplies. Its low on-resistance of 75 milliohms contributes to low conduction losses, enhancing overall system efficiency.

The device operates reliably in a broad temperature range from -55°C up to 150°C, adapting well to industrial and automotive thermal conditions. The typical gate charge of 38 nC allows for rapid switching speeds, critical for PWM control and efficient power conversion.

Mechanical dimensions are compact with a length of 10.4 mm, width of 4.6 mm, and height of 15.75 mm, facilitating space-saving designs. The maximum power dissipation rating of 125 W ensures robust performance under demanding electrical load conditions.

Applications for this MOSFET include industrial automation, power management modules, automotive electronics, and consumer electronics where high current and voltage handling in a compact form factor are critical.

High-performance N-Channel STripFET™ MOSFET technology. Maximum continuous drain current of 30 A supports heavy load demands. Drain-source voltage rating of 200 V provides robust voltage tolerance. Enhanced conduction with only 75 mΩ Rds(on).

Designed for through-hole PCB mounting with TO-220 package. Wide operating temperature range ensures reliable performance in diverse environments. High power dissipation capacity of 125 W allows for intense power applications.

Fast switching with 38 nC typical gate charge supports efficient power control. Protected gate voltage limits to ±20 V to maintain device integrity. Compact physical size for use in space-sensitive electronic assemblies.

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