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STMicroelectronics STripFET Type N-Channel MOSFET, 18 A, 200 V Enhancement Mode, TO-220 Package, 3-Pin STP20NF20
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP20NF20 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET supports a maximum continuous drain current of 18 A.
- It has a maximum drain-source voltage rating of 200 V, suitable for high voltage applications.
- The device comes in a durable TO-220 package with three pins for through-hole mounting.
- Enhancement mode channel operation enhances switching performance and control.
- Maximum power dissipation is rated at 110 W providing robust thermal handling.
- Operating temperature ranges from -55°C to a maximum of 175°C for reliable industrial use.
- The typical gate charge at Vgs is 28 nC aiding efficient gate drive.
- Maximum gate-source voltage is 20 V ensuring safe gate voltage limits.
Product Description
STMicroelectronics STP20NF20 is a high-performance N-Channel STripFET MOSFET designed for efficient power switching and amplification in electronic and power management applications. With a maximum continuous drain current of 18 A and a maximum drain-source voltage of 200 V, this transistor supports robust operation in medium to high voltage circuits.
The device features an enhancement mode channel and is housed in a TO-220 package equipped with three pins suitable for through-hole mounting. Its high maximum power dissipation rating of 110 W permits excellent thermal management under demanding conditions.
STP20NF20 operates reliably over a broad temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and commercial electronics environments. The typical gate charge of 28 nC at standard gate voltage ensures fast switching and low gate drive losses.
It has a maximum gate-source voltage rating of 20 V and a low forward voltage drop of 1.6 V, which translates to minimized conduction losses and improved circuit efficiency. The compact physical size (15.75 mm height, 10.4 mm length, 4.6 mm width) facilitates integration into densely populated PCBs.
Supports 18 A continuous drain current for high load applications. Maximum voltage rating of 200 V ensures safe operation in demanding conditions. Robust TO-220 package for effective heat dissipation and durability. Designed for through hole mounting compatibility.
Enhancement mode ensures superior switching characteristics. Operates over a wide temperature range from -55°C to 175°C. Low gate charge of 28 nC allows efficient switching with minimal losses. Maximum gate-source voltage of 20 V safeguards device integrity.
Forward voltage of only 1.6 V reduces energy dissipation. Compact dimensions help in space-constrained designs. This MOSFET is ideal for industrial, commercial, automotive power control, and electronic design applications requiring reliable and efficient transistor performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
It has a maximum drain-source voltage rating of 200 V, suitable for high voltage applications.
This MOSFET is housed in a TO-220 package, which is designed for through-hole mounting.
The operating temperature range is from -55°C to a maximum of 175°C.
The typical gate charge at Vgs is 28 nC, which aids in efficient gate driving.
The maximum power dissipation rating for this MOSFET is 110 W, allowing for effective thermal management.
The forward voltage drop is only 1.6 V, which helps minimize conduction losses.
This model features a 3-pin configuration.
The channel type is N-channel, which is suitable for enhancement mode operation.
The maximum gate-source voltage is rated at 20 V, ensuring safe gate voltage limits.
This MOSFET is suitable for industrial, automotive, and commercial electronics applications requiring efficient power control.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
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