Vishay P-Channel MOSFET 4.4 A 8 V Enhancement 3-Pin SOT-23 SI2305CDS-T1-GE3

Vishay SI2305CDS-T1-GE3 is a P-Channel MOSFET designed for efficient power switching applications. It delivers a maximum continuous drain current of 4.4 A and a maximum drain-source voltage of 8 V. Packaged in a compact 3-pin SOT-23 surface-mount device, this transistor is optimized for space-constrained electronic assemblies.

This device operates in enhancement mode, offering a low maximum drain-source resistance of 35 milliohms to ensure minimal conduction losses. It supports a power dissipation rating of up to 960 milliwatts, enabling stable operation under thermal stress.

The MOSFET maintains operational stability across a wide temperature range from -55°C to 150°C, making it suitable for diverse industrial, commercial, and electronic manufacturing applications. Its typical gate charge of 20 nanocoulombs at recommended gate-source voltage levels allows for responsive switching performance.

Additional features include a maximum gate-source voltage tolerance of -8 to +8 volts, and a forward voltage drop of -1.2 volts, enhancing its control and efficiency characteristics.

With precise package dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height, this SOT-23 device fits well into modern compact PCB designs. Manufactured in China, it complies with standard industry quality and reliability requirements.

This MOSFET operates with enhancement mode channel type for improved switching efficiency. Maximum drain-source resistance of 35 milliohms ensures low conduction losses. Supports maximum power dissipation of 960 milliwatts for reliable thermal performance.

Designed for surface mount with a compact 3.04 mm length and 1.4 mm width package dimensions. Operates safely across temperatures from -55°C to 150°C for industrial applications. Features typical gate charge of 20 nanocoulombs at recommended gate-source voltage levels.

Maximum gate-source voltage rated at ±8 V enabling robust control signal tolerance. Forward voltage drop is -1.2 V ensuring efficient conduction in circuits. Manufactured in China, suitable for semiconductor and electronics component use cases.

This Vishay MOSFET is ideal for use in industrial electronics, power management circuits, and other semiconductor applications requiring robust and compact P-channel transistor solutions. Browse more semiconductor and MOSFET device options on EnvMart for your electronic design needs.

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