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Infineon OptiMOS N-Channel MOSFET & Diode 100 A 75 V Enhancement Mode Through Hole TO-263 3-Pin IPB100N08S2L07ATMA1

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPB100N08S2L07ATMA1
Mount Type Through Hole
Series OptiMOS
Package Type TO-263
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 75V
Maximum Drain Source Resistance Rds 0.65mΩ
Channel Mode Enhancement

Key Features

  • This MOSFET utilizes Infineon's OptiMOS technology for efficient power performance.
  • It supports high continuous drain current of 100 amperes suitable for automotive and industrial applications.
  • The device exhibits a low maximum drain-source resistance of 0.65 milliohms.
  • Reliably operates at high temperatures up to 175°C with automotive AEC-Q101 qualification.
  • Enhancement mode N-channel operation ensures logic level compatibility.
  • Designed for through-hole mounting with a standard TO-263 package facilitating easy integration.
  • Complies with automotive standards without additional approvals, focusing on performance and reliability.

Product Description

Infineon IPB100N08S2L07ATMA1 is a high-performance N-channel MOSFET and diode device that combines a 100 A maximum continuous drain current with a 75 V drain-source voltage rating. Packaged in a 3-pin TO-263 through-hole form factor, it uses the latest OptiMOS technology optimized for automotive and industrial power management solutions.

This MOSFET operates in enhancement mode and is qualified under the demanding AEC-Q101 automotive standard, guaranteeing reliability in harsh environments. It maintains a low RDS(on) of 0.65 milliohms, which contributes to efficient conduction and reduced power loss when switching high currents.

Designed for a range of automotive power electronics applications, including 48 V systems, starter generators, main inverters, DC-DC converters, LED lighting systems, fuel injection controls, and in-vehicle wireless charging, the IPB100N08S2L07ATMA1 offers robust performance with high temperature capability up to 175°C and an MSL1 peak reflow temperature rating of 260°C.

The TO-263 package supports through-hole mounting, facilitating straightforward PCB assembly and mechanical robustness in demanding industrial settings. The device's automotive qualification ensures it meets strict quality and reliability requirements characteristic of vehicle electronics.

This MOSFET utilizes Infineon's OptiMOS technology for efficient power performance. It supports high continuous drain current of 100 amperes suitable for automotive and industrial applications. The device exhibits a low maximum drain-source resistance of 0.65 milliohms.

Reliably operates at high temperatures up to 175°C with automotive AEC-Q101 qualification. Enhancement mode N-channel operation ensures logic level compatibility. Designed for through-hole mounting with a standard TO-263 package facilitating easy integration.

Complies with automotive standards without additional approvals, focusing on performance and reliability.

This product is ideal for industrial, automotive, power electronics, and manufacturing sectors requiring high current MOSFET solutions with reliable thermal and electrical performance. Explore more Infineon OptiMOS MOSFETs and related power semiconductor devices in EnvMart's electronics catalog for your project needs.

Infineon OptiMOS N-Channel MOSFET & Diode 100 A 75 V Enhancement Mode Through Hole TO-263 3-Pin IPB100N08S2L07ATMA1
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