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Vishay P-Channel Power MOSFET HVMDIP Package 4-Pin, -0.4 A, 200 V IRFD9210PBF

Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin Philippines
Brand Vishay
Height 8.38mm
Length 10.79mm
Model IRFD9210PBF
Width 5mm
Maximum Operating Temperature 150°C
Package Type HVMDIP
Minimum Operating Temperature -55°C
Standards/Approvals RoHS 2002/95/EC
Pin Count 4
Number of Elements per Chip 1
Channel Type Type P
Maximum Continuous Drain Current Id -0.4A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 3Ω
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 8.9nC
Maximum Gate Source Voltage Vgs 20V
Transistor Configuration Single

Key Features

  • Type P channel transistor for power switching and amplification.
  • Maximum continuous drain current of -0.4 amperes for stable operation.
  • Rated for 200 volts drain to source voltage ensuring robust electrical tolerance.
  • Compact 4-pin HVMDIP package for easy PCB mounting.
  • Low maximum drain-source resistance of 3 ohms at 10 Vgs improving efficiency.
  • High maximum gate-source voltage rating of 20 volts.
  • Typical gate charge of 8.9 nanocoulombs at Vgs enhancing switching speed.
  • Power dissipation capacity up to 1 watt for thermal reliability.

Product Description

Vishay IRFD9210PBF is a high-quality P-Channel power MOSFET designed for efficient power management in electronic circuits. Packaged in a HVMDIP 4-pin form factor with compact dimensions (Length 10.79 mm, Width 5 mm, Height 8.38 mm), it delivers a maximum continuous drain current of -0.4 A and a maximum drain-source voltage of 200 V. The device is optimized for stability and low power loss with a maximum drain-source resistance of 3 ohms at 10 V gate drive.

This MOSFET supports gate voltages up to 20 V and a typical gate charge of 8.9 nC, enabling fast switching performance ideal for power supply circuits, voltage regulators, and switching applications in industrial and consumer electronics.

It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh operating environments in industrial, automotive, and HVAC systems where robust performance is critical. The single transistor configuration and RoHS 2002/95/EC compliance ensure it meets environmental standards and supports green design.

Its package and pin count facilitate easy automated insertion and circuit layout design on printed circuit boards, contributing to manufacturing efficiency.

Country of origin is Philippines, ensuring manufacturing quality assurance. The transistor's dynamic dV/dt rating and repetitive avalanche capability add reliability for surge and transient conditions common in power electronics.

Type P channel transistor for power switching and amplification. Maximum continuous drain current of -0.4 amperes for stable operation. Rated for 200 volts drain to source voltage ensuring robust electrical tolerance. Compact 4-pin HVMDIP package for easy PCB mounting.

Low maximum drain-source resistance of 3 ohms at 10 Vgs improving efficiency. High maximum gate-source voltage rating of 20 volts. Typical gate charge of 8.9 nanocoulombs at Vgs enhancing switching speed. Power dissipation capacity up to 1 watt for thermal reliability.

Wide operating temperature range from -55 to 150 degrees Celsius suitable for diverse environments. Single transistor configuration for discrete circuit design.

This Vishay IRFD9210PBF power MOSFET is ideal for industrial power control, consumer electronics, and automotive applications requiring reliable and efficient semiconductor switches. Explore more high-performance MOSFETs and power management components at EnvMart.

Vishay P-Channel Power MOSFET HVMDIP Package 4-Pin, -0.4 A, 200 V IRFD9210PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is -0.4 A.

It is rated for a maximum drain-source voltage of 200 V.

The power dissipation capacity is up to 1 watt.

The dimensions of the HVMDIP package are 10.79 mm in length, 5 mm in width, and 8.38 mm in height.

The maximum gate-source voltage is rated at 20 V.

The typical gate charge at Vgs is 8.9 nanocoulombs.

The maximum drain-source resistance is 3 ohms at 10 Vgs.

It operates reliably over a wide temperature range from -55°C to 150°C.

This model complies with RoHS 2002/95/EC standards.

The HVMDIP package has 4 pins.

The transistor configuration is single, designed for discrete circuit applications.

The country of origin for this MOSFET is the Philippines.

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