Infineon HEXFET N-Channel MOSFET & Diode, 42 A Max Drain Current, 55 V Max Drain Source Voltage, TO-252 IRFR1010ZTRPBF

Infineon IRFR1010ZTRPBF HEXFET N-Channel MOSFET & Diode integrates a 42 A continuous drain current capability and a 55 V maximum drain-source voltage within a compact TO-252 3-pin surface-mount package.

Developed with high performance and efficiency in mind, this device uses Infineon's OptiMOS technology to offer an industry-leading figure of merit optimized for high switching frequencies. It supports a maximum gate-source voltage of 20 V and a low Rds(on) of 7.5 milliohms, minimizing conduction losses in power-sensitive applications.

With a maximum power dissipation of 366 watts, it can handle demanding load conditions and operate safely across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial environments and automotive-grade usage although not automotive certified.

This MOSFET is ideal for use in switching mode power supplies (SMPS), motor controls, drive circuits, inverters, and battery management systems. The compact TO-252 surface-mount package facilitates high-density PCB layouts and is compatible with wave soldering processes, ensuring manufacturing efficiency.

Package dimensions are approximately 15.87 mm length, 5.31 mm width, and 20.7 mm height. Features HEXFET technology for efficient power management. Maximum drain-source resistance of 7.5 milliohms for low conduction losses.

Typical gate charge is 460 nC at gate-source voltage. High maximum power dissipation up to 366 W. Temperature operation range from -55°C to 175°C. Optimized for 10 V gate drive voltage. Surface-mount TO-252 package with 3 pins.

Applications include SMPS, motor drives, inverters, and battery powered devices. Explore more Infineon semiconductor products for reliable electronic design solutions through EnvMart.

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