onsemi Isolated 2 Type P-Channel Small Signal MOSFET, 430 mA, 20 V, Enhancement Mode, 6-Pin SOT-563 Package NTZD3152PT1G

onsemi NTZD3152PT1G is a high-performance isolated dual P-channel MOSFET designed for small signal applications. Its enhancement mode operation supports efficient switching in electronic circuits with a continuous drain current capacity of 430 mA and a drain-source voltage of 20 V. The device features a low drain-source resistance of 2 Ω, reducing conduction losses and improving energy efficiency in power-sensitive designs.

The MOSFET comes in a compact 6-pin SOT-563 surface mount package, offering space-saving installation on printed circuit boards (PCBs). Dimensions of 1.7 mm length, 1.3 mm width, and 0.6 mm height make it ideal for dense electronic assemblies, particularly in portable and industrial equipment.

Its maximum power dissipation rating of 280 mW and a broad operating temperature range from -55°C to +150°C provide reliability under varied environmental conditions, making it suitable for automotive and industrial applications where durability is critical. The typical gate charge of 10 nC and gate-source voltage tolerance of ±6 V allow rapid switching with protection against voltage spikes.

This device includes dual elements per chip with isolated transistor configuration, enhancing design flexibility. It does not comply with specific industry standards or automotive certifications but is robust for general electronic control applications.

Ideal for industrial, electronic component manufacturing, power management, and embedded systems, the NTZD3152PT1G MOSFET enables compact, efficient circuit designs requiring reliable small signal switching. It supports designers developing low-voltage signal amplification, switching, and protection circuits in sectors such as consumer electronics, telecommunications, and instrumentation.

This MOSFET operates in enhancement mode suitable for low power switching applications. Maximum continuous drain current is 430 mA allowing efficient signal control. It has a maximum drain-source voltage rating of 20 V for reliable performance.

Low drain-source resistance of 2 Ω minimizes power loss during operation. Compact surface mount package (SOT-563) with 6 pins facilitates PCB space savings. Wide operating temperature range from -55°C to +150°C ensures durability in harsh environments.

Typical gate charge of 10 nC at Vgs enables fast switching. Maximum gate-source voltage rating is ±6 V providing protection against overvoltage. Small transistor dimensions of 1.7 mm length, 1.3 mm width, and 0.6 mm height optimize space use.

Dual isolated elements per chip offer enhanced functionality in a single device. Explore more electronic components and MOSFET devices at EnvMart for advanced industrial and commercial applications.

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