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ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement Mode, 3-Pin SC-75 Package RE1C002ZPTL

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ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement Mode, 3-Pin SC-75 Package RE1C002ZPTL

Name: ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement Mode, 3-Pin SC-75 Package RE1C002ZPTL
Brand: ROHM
SKU: 147610

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Category MOSFETs Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	0.8mm
Length	1.7mm
Model	RE1C002ZPTL
Width	0.96mm
Mount Type	Surface
Series	RE1C002ZP
Maximum Operating Temperature	150°C
Package Type	SC-75
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	9.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	10V
Forward Voltage Vf	1.2V

Key Features

Supports a maximum continuous drain current of 200 mA.
Operates with a maximum drain-source voltage of 20 V.
Features an enhancement mode channel with 9.6 ohms on-resistance.
Maximum power dissipation rated at 150 mW.
Compact SC-75 package measuring 1.7 mm length, 0.96 mm width, 0.8 mm height.
Typical gate charge at Vgs of 1.4 nC for efficient switching.
Forward voltage drop of approximately 1.2 V.
Operates in temperature range from -55°C to 150°C.

Product Description

ROHM RE1C002ZPTL Type P-Channel MOSFET is a compact surface-mount semiconductor device engineered for low voltage (20 V) and low current (200 mA) switching applications in electronics.

This MOSFET operates in enhancement mode with a P-channel, making it suitable for use in power management, signal switching, and low-level control circuits where small current and voltage handling are needed.

The device’s package is a 3-pin SC-75 surface mount type with minimal footprint, measuring 1.7 mm in length, 0.96 mm in width, and 0.8 mm in height, facilitating compact PCB designs.

Key electrical features include a maximum drain-source resistance of 9.6 ohms, maximum power dissipation of 150 mW, and a typical gate charge of 1.4 nC ensuring efficient switching characteristics.

Designed to function reliably across a wide temperature range from -55°C to 150°C, the RE1C002ZPTL delivers robust performance under diverse environmental conditions. This product complies with RoHS directives, supporting environmentally responsible manufacturing and assembly processes.

This MOSFET supports a maximum continuous drain current of 200 mA. Maximum drain-source voltage is rated at 20 V suitable for low voltage circuits. Features a low on-resistance of 9.6 ohms to minimize power loss. Maximum power dissipation is 150 mW for signal-level switching.

Compact SC-75 package dimensions allow dense PCB layout. Typical gate charge voltage of 1.4 nC for efficient gate drive control. Forward voltage drop of 1.2 V during conduction improves device efficiency. Operating temperature range supports industrial and commercial applications.

RoHS compliant and lead-free for environmental safety.

ROHM’s RE1C002ZPTL MOSFET is ideal for use in industrial electronics, power management circuits, consumer electronics, and automotive signal switching where small form factor and reliable low-power performance are critical.

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