STMicroelectronics N-Channel MDmesh K5 SuperMESH5 MOSFET 14A 800V TO-247 STW15N80K5

STMicroelectronics STW15N80K5 is a high-performance N-Channel MDmesh K5 SuperMESH5 MOSFET designed for power semiconductor applications requiring efficient switching and high current handling capability. Rated at 14 amps maximum continuous drain current and 800 volts maximum drain-source voltage, this device is ideal for industrial and electronic power control circuits.

The device utilizes enhancement mode channel technology to ensure low switching losses and improved efficiency. Encapsulated in a rugged 3-pin TO-247 package with through-hole mounting, it can dissipate up to 190 watts making it suitable for demanding thermal environments in industrial power supplies, motor drives, and energy management systems.

With a typical gate charge of 32nC measured at Vgs, the MOSFET achieves fast switching speeds beneficial for power conversion and inverter circuits. Its low on-resistance of 375 milliohms reduces conduction losses improving overall system efficiency. The operating temperature range from -55°C to 150°C ensures reliable performance in harsh environmental conditions.

The compact size with dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width allows integration into space-constrained PCB designs. Although no special automotive or industry-specific certifications apply, it fulfills critical electrical and thermal performance requirements for general industrial and electronic applications.

STMicroelectronics’ MDmesh K5 SuperMESH5 MOSFETs are widely used in power management, industrial automation, and consumer electronics. They offer a dependable and high-performance solution for engineers seeking reliable, high voltage, and high current discrete semiconductors.

This MOSFET features an enhancement channel mode for efficient switching performance. It has a maximum continuous drain current of 14 amps ensuring reliable operation in power control circuits. The maximum drain-source voltage rating of 800 volts supports high voltage applications.

The device is housed in a TO-247 package with 3 pins and through-hole mount type. It offers a maximum power dissipation of 190 watts suitable for demanding thermal environments. The typical gate charge at Vgs is 32 nanocoulombs for quick switching transitions.

It operates safely within temperature range from -55°C to 150°C. Its maximum drain-source resistance is 375 milliohms minimizing conduction losses. The MOSFET's dimensions are 20.15mm height, 15.75mm length, and 5.15mm width.

No automotive or special standards approvals are specified for this device. Explore more high-quality semiconductor products from STMicroelectronics at EnvMart for your industrial, laboratory, and manufacturing electronics needs.