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ROHM P-Channel MOSFET, 3-Pin SC-96 Package, 3.5 A, 30 V, Enhancement Mode, 1 W Power Dissipation RQ5E035ATTCL

Category MOSFETs Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 950μm
Length 3mm
Model RQ5E035ATTCL
Width 1.8mm
Mount Type Surface
Series RQ5E035AT
Maximum Operating Temperature 150°C
Package Type SC-96
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 70mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET features enhancement mode operation for precise control.
  • It has a low maximum drain-source resistance of 70 milliohms for efficient switching.
  • The device supports a maximum power dissipation of 1 watt for reliable performance.
  • Operating temperature ranges from -55°C to 150°C for diverse industrial applications.
  • Designed for surface mount technology with a 3-pin configuration.
  • Typical gate charge is 10 nanocoulombs at Vgs, beneficial for fast switching.
  • Forward voltage drop of -1.2 V ensures minimal voltage loss.
  • Maximum gate-source voltage rating is ±20 V, allowing robust gate control.

Product Description

ROHM RQ5E035ATTCL is a P-Channel MOSFET transistor designed for efficient switching in electronic and semiconductor applications. Featuring a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 30 V, this 3-pin SC-96 package device operates in enhancement mode. It offers a maximum power dissipation rating of 1 watt, making it suitable for various industrial uses including power management and switching circuits.

The MOSFET supports a wide operating temperature range from -55°C to 150°C, ensuring reliability under harsh conditions. It has a low drain-source resistance of 70 milliohms which aids in energy efficiency and heat management. The gate charge of 10 nanocoulombs at gate-source voltage facilitates fast switching speeds essential for modern electronic circuits.

Compact in size with dimensions measuring 3 mm in length, 1.8 mm in width, and 950 micrometers in height, it supports surface mount technology (SMT) which is ideal for automated PCB assembly lines. The device's ±20 V maximum gate-source voltage rating provides robust protection and control over the switching gate.

This MOSFET is applicable in numerous fields such as industrial automation, power electronic modules, communication devices, and consumer electronics. Its P-Channel configuration is specifically useful where negative voltage switching is required.

This P-Channel MOSFET provides low Rds(on) for efficient conduction. Effective thermal tolerance makes it suitable for demanding environments. The surface mount package optimizes PCB space and assembly. Gate charge characteristics support high-frequency operation.

Wide voltage and temperature ratings increase application versatility.

ROHM is recognized for quality semiconductor devices used in industrial and commercial electronic manufacturing. Explore additional ROHM semiconductor products and MOSFETs in the MOSFET category for enhanced electronic solutions.

ROHM P-Channel MOSFET, 3-Pin SC-96 Package, 3.5 A, 30 V, Enhancement Mode, 1 W Power Dissipation RQ5E035ATTCL
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