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STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET, 13 A, 1 kV, 3-Pin TO-247 STW13NK100Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW13NK100Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed for high power switching applications with 350 W maximum power dissipation.
- Features a maximum drain-source resistance of 700 milliohms for efficient conduction.
- Operates reliably between -55°C and 150°C for industrial environments.
- Equipped with a typical gate charge of 190 nC facilitating fast switching.
- Enhanced channel mode ensures robust transistor switching performance.
- Compact dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width optimize PCB layout.
- Maximum gate-source voltage rating of ±30 V protects gate integrity.
- Forward voltage drop of 1.3 V enhances energy efficiency.
Product Description
STMicroelectronics STW13NK100Z is a MDmesh SuperMESH Type N-Channel MOSFET designed for demanding power electronics applications requiring up to 13 A continuous drain current and a maximum drain-source voltage of 1 kV. Packaged in a 3-pin TO-247 format, it supports through-hole mounting offering mechanical stability and ease of assembly in industrial, automotive, and power control systems.
The device operates efficiently with a maximum power dissipation of 350 W, enabling high switching performance in power converters and motor control circuits. Its maximum drain-source resistance of 700 milliohms reduces conduction losses and improves overall system efficiency. The transistor exhibits a typical gate charge of 190 nC assuring fast and reliable switching operations.
Operating temperature range from -55°C to 150°C makes it suitable for harsh environments and industrial-grade applications. The STW13NK100Z supports an enhancement channel mode, providing reliable transistor switching functionality. It withstands gate-source voltages up to 30 V ensuring longevity and protection against voltage transients.
With physical dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width, it offers compact integration possibilities on PCBs. The forward voltage of 1.3 V further contributes to optimized power management in electronic circuits.
High continuous drain current capability up to 13 A. Robust 1 kV maximum drain-source voltage rating. Low drain-source resistance minimizes power loss. Wide operating temperature range ensures industrial reliability. Fast switching with typical gate charge of 190 nC.
Through-hole TO-247 package for easy mounting. Enhancement mode for improved transistor performance. High maximum power dissipation of 350 W supports demanding applications. Compact physical dimensions optimize PCB design.
This MOSFET is ideal for industrial power electronics, motor drivers, power supplies, and other high-reliability semiconductor applications. Its MDmesh SuperMESH construction ensures enhanced electrical performance and thermal management, making it suitable for integration in demanding electrical systems.
Discover more components in the MOSFET category or explore STMicroelectronics products for advanced semiconductor solutions at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
It has a maximum drain-source voltage rating of 1 kV.
This MOSFET can handle a maximum power dissipation of 350 W.
The typical gate charge is 190 nC, which facilitates fast switching.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
It has a maximum gate-source voltage rating of ±30 V.
The operating temperature range is from -55°C to 150°C.
The maximum drain-source resistance is 700 milliohms, which minimizes conduction losses and improves efficiency.
This model uses a through-hole mounting type, specifically in a TO-247 package.
It is a Type N channel MOSFET, which supports enhancement mode operation.
It is ideal for industrial power electronics, motor drivers, and power supplies.
This model belongs to the MDmesh and SuperMESH series.
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