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Vishay Type N-Channel Power MOSFET 2.6 A 200 V 3-Pin Surface and Through Hole Mount IRFR210PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.22mm |
| Model | IRFR210PBF |
| Width | 6.73mm |
| Mount Type | Surface, Through Hole |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 8.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 2V |
| Transistor Configuration | Single |
Key Features
- Designed for surface mount and through hole mounting applications.
- Low maximum drain source resistance of 1.5 ohms ensures efficient power delivery.
- Supports maximum gate-source voltage of 20 V for stable switching.
- Typical gate charge is 8.2 nC enabling rapid switching operations.
- Maximum power dissipation rated at 25 W for moderate power circuits.
- Operating temperature range from -55°C to 150°C suitable for diverse environments.
- Compact DPAK (TO-252) and IPAK (TO-251) package with 3 pins for easy PCB integration.
Product Description
The Vishay IRFR210PBF is a Type N-channel power MOSFET engineered for reliable switching and power management in electronic circuits. Featuring a maximum continuous drain current of 2.6 A and a maximum drain-source voltage of 200 V, this 3-pin component supports both surface mount and through hole applications, offering flexibility in PCB design.
This MOSFET exhibits a low drain-source on-resistance of 1.5 Ω at 10 V gate drive which helps in minimizing power losses and improving efficiency in power circuits. Its gate-source voltage is rated up to 20 V, and the typical gate charge of 8.2 nC enables fast switching suitable for power regulation tasks.
Construction in compact DPAK (TO-252) and IPAK (TO-251) packages makes this device convenient for industrial and commercial electronic applications, including power supplies and motor controls. Operating temperature span from -55°C to 150°C makes it suitable for demanding environments within industrial automation and electronics manufacturing.
This MOSFET supports Repetitive avalanche rating improving robustness against transient voltages. Designed with a single transistor configuration optimizing performance in discrete semiconductor assemblies. Manufactured in China under stringent quality standards, ensuring consistent reliability.
Commonly used in power and electronic component circuits within the semiconductor industry. Package dimensions are compact: Width 6.73 mm, Height 2.38 mm, Length 6.22 mm, facilitating high-density PCB layouts.
This product is new and offers a dependable solution for power management when designing electronic devices, industrial control units, and laboratory instruments. Vishay’s IRFR210PBF MOSFET is ideal for system integrators and design engineers needing a sturdy and efficient N-channel power transistor.
Explore more semiconductor components and MOSFETs in EnvMart’s Electronics & Electricals category for a wide range of technical solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.6 A.
It has a maximum drain-source voltage rating of 200 V.
The typical gate charge is 8.2 nC, enabling rapid switching operations.
The package dimensions are 6.73 mm in width, 2.38 mm in height, and 6.22 mm in length.
The maximum power dissipation is rated at 25 W.
The operating temperature range is from -55°C to 150°C.
It supports both surface mount and through hole mounting applications.
The maximum gate-source voltage is rated at 20 V.
This MOSFET uses a single transistor configuration.
The drain-source on-resistance is 1.5 Ω at a 10 V gate drive.
It is commonly used in power supplies and motor controls within the semiconductor industry.
The IRFR210PBF is manufactured in China.
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