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Infineon OptiMOS 2 Dual N, P-Channel MOSFET, 1.5A, 30V, TSOP-6 Surface-Mount, Isolated Type BSL316CH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSL316CH6327XTSA1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.86V |
| Transistor Configuration | Isolated |
Key Features
- Offers complementary N-channel and P-channel MOSFETs in a single device.
- Supports continuous drain current of 1.5A and maximum drain-source voltage of 30V.
- Enhancement mode operation ensures fast switching characteristics.
- Surface-mount TSOP-6 package designed for space-constrained assemblies.
- Low 280mΩ drain-source resistance for efficient power handling.
- Operates from −55°C to 150°C for use in harsh environments.
- 500mW maximum power dissipation enables reliable use in compact circuits.
- Automotive-grade AEC-Q101 qualified for stringent application needs.
Product Description
The Infineon OptiMOS 2 BSL316CH6327XTSA1 is an advanced dual N, P-Channel MOSFET engineered for precise, low-voltage switching in automotive, industrial, and control system applications. Designed with isolated topology, this MOSFET delivers both N- and P-channel elements within a single surface-mount TSOP-6 package, making it ideal where board space and reliable power management are critical.
With a 1.5A continuous drain current and a maximum drain-source voltage of 30V, this device is well suited for DC load switching in vehicle electronics, battery management, and protection circuits. The enhancement mode ensures rapid ON/OFF performance, while its low drain-source resistance (280mΩ) reduces energy dissipation and optimizes system efficiency.
Automotive environments demand robust electronic components. BSL316CH6327XTSA1 withstands temperatures from −55°C up to 150°C, ensuring stable operation in extreme conditions. Its 2.4nC typical gate charge also supports efficient gate drive and high-speed switching, essential for modern power supplies and driver stages.
Dual isolated N-channel and P-channel MOSFET design for flexible deployment. Delivers a maximum power dissipation up to 500mW to prevent thermal overload. 6-pin TSOP-6 enclosure minimizes PCB footprint for dense layouts.
AEC-Q101 certification demonstrates proven reliability for automotive use cases. Suitable for SMD power management, push-pull drivers, load disconnects, and temperature-sensitive circuitry. 2 elements per chip enable efficient complementary switching within compact modules.
Whether you are engineering battery protection modules, smart vehicle electronics, or robust industrial controllers, the Infineon BSL316CH6327XTSA1 provides the electrical and mechanical characteristics required for demanding switching functions. Each device offers precision switching, thermal stability, and surface-mount simplicity.
Typical applications are found in automotive modules, factory automation, DC-DC conversion, and high-efficiency SMD power switching on control boards. Its compact size is particularly advantageous in densely populated PCBs where thermal management, reliability, and form-factor matter.
Explore more MOSFETs, power semiconductors, and automotive-grade solutions under the Infineon brand in the EnvMart Electronics & Electricals catalogue.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5A.
It can handle a maximum drain-source voltage of 30V.
This model comes in a TSOP-6 surface-mount package type.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 2.4nC at Vgs.
This chip contains 2 elements per chip, providing both N-channel and P-channel MOSFETs.
The maximum power dissipation is 500mW.
The maximum drain-source resistance is 280mΩ.
It is AEC-Q101 qualified, ensuring it meets stringent automotive application requirements.
The dimensions are 1mm in height, 2.9mm in length, and 1.6mm in width.
This device features an isolated transistor configuration.
It is suitable for applications in automotive modules, battery management, and DC load switching.
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