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IXYS HiperFET Polar Type N-Channel MOSFET 96A 150V TO-247 Through Hole Enhancement IXFH96N15P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH96N15P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 96A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 480W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Offers high drain current capability up to 96A for robust power applications.
- 150V maximum drain-source voltage enables versatile circuit designs.
- TO-247 package and through-hole mounting simplify integration and thermal management.
- Low drain-source resistance of 24mΩ minimizes conduction losses.
- Enhancement mode operation ensures efficient control and switching.
- Supports fast intrinsic diode for improved switching performance.
- Wide operating temperature range from -55°C to 175°C for industrial reliability.
- Power dissipation up to 480W suitable for demanding environments.
Product Description
The IXYS IXFH96N15P is a high-performance HiperFET Polar Series N-Channel MOSFET designed for power electronic and industrial control systems. With a maximum continuous drain current of 96A and a drain-source voltage capability up to 150V, it is ideal for applications requiring high current and voltage handling, such as switching power supplies, motor drives, and inverter circuits.
Constructed in a TO-247 package with through-hole mounting, the device provides enhanced thermal dissipation and reliable mechanical attachment, ensuring long-term operation under heavy loads. The low Rds(on) of just 24mΩ reduces power loss during conduction, contributing to overall system efficiency and minimizing heat generation. The enhancement mode channel enables easy interfacing with standard gate drive circuitry.
The IXFH96N15P features a fast intrinsic HiPerFET diode integrated in the device, optimizing switching speed and lowering reverse recovery losses. The wide operating temperature range, from -55°C up to 175°C, means the MOSFET performs reliably in both low- and high-temperature environments, ensuring safe operation in industrial, commercial, and laboratory settings. Its maximum power dissipation rating of 480W further expands its usage in demanding power handling systems.
Additional specifications include a typical gate charge of 110nC at Vgs, maximum gate-source voltage of 20V, and forward voltage of 1.5V. The MOSFET is built with three pins and is part of the advanced IXYS HiperFET Polar series, which is well-regarded for robust design and high reliability in power conversion circuits.
This device is ideal for industrial power management, laboratory instrumentation, automation, renewable energy converters, high-efficiency motor control, and commercial equipment. Its construction and features make it a dependable solution for system designers looking for an N-channel MOSFET with strong electrical and thermal performance.
Explore more power semiconductor devices and industry-leading solutions from IXYS in the MOSFETs category on EnvMart.
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Frequently Asked Questions
The IXFH96N15P has a maximum continuous drain current of 96A, making it suitable for high current applications.
The IXFH96N15P is housed in a TO-247 package and features through-hole mounting, which simplifies integration and thermal management.
It has a low drain-source resistance of 24mΩ, which minimizes conduction losses during operation.
The IXFH96N15P operates reliably within a wide temperature range from -55°C to 175°C, suitable for industrial applications.
This MOSFET has a maximum power dissipation rating of 480W, making it suitable for demanding power handling systems.
The typical gate charge for the IXFH96N15P at Vgs is 110nC, facilitating efficient control and switching.
The maximum gate-source voltage for this model is 20V, ensuring compatibility with standard gate drive circuitry.
The IXFH96N15P features a three-pin configuration, which is standard for its type.
It utilizes an N-channel type, which is common for enhancement mode applications.
The forward voltage of the integrated diode in this model is 1.5V, optimizing its performance in switching applications.
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