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IXYS HiperFET Polar Type N-Channel MOSFET 96A 150V TO-247 Through Hole Enhancement IXFH96N15P

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IXYS HiperFET Polar Type N-Channel MOSFET 96A 150V TO-247 Through Hole Enhancement IXFH96N15P

Name: IXYS HiperFET Polar Type N-Channel MOSFET 96A 150V TO-247 Through Hole Enhancement IXFH96N15P
Brand: IXYS
SKU: 85299

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Category MOSFETs Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH96N15P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	96A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	24mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	480W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.5V

Key Features

Offers high drain current capability up to 96A for robust power applications.
150V maximum drain-source voltage enables versatile circuit designs.
TO-247 package and through-hole mounting simplify integration and thermal management.
Low drain-source resistance of 24mΩ minimizes conduction losses.
Enhancement mode operation ensures efficient control and switching.
Supports fast intrinsic diode for improved switching performance.
Wide operating temperature range from -55°C to 175°C for industrial reliability.
Power dissipation up to 480W suitable for demanding environments.

Product Description

The IXYS IXFH96N15P is a high-performance HiperFET Polar Series N-Channel MOSFET designed for power electronic and industrial control systems. With a maximum continuous drain current of 96A and a drain-source voltage capability up to 150V, it is ideal for applications requiring high current and voltage handling, such as switching power supplies, motor drives, and inverter circuits.

Constructed in a TO-247 package with through-hole mounting, the device provides enhanced thermal dissipation and reliable mechanical attachment, ensuring long-term operation under heavy loads. The low Rds(on) of just 24mΩ reduces power loss during conduction, contributing to overall system efficiency and minimizing heat generation. The enhancement mode channel enables easy interfacing with standard gate drive circuitry.

The IXFH96N15P features a fast intrinsic HiPerFET diode integrated in the device, optimizing switching speed and lowering reverse recovery losses. The wide operating temperature range, from -55°C up to 175°C, means the MOSFET performs reliably in both low- and high-temperature environments, ensuring safe operation in industrial, commercial, and laboratory settings. Its maximum power dissipation rating of 480W further expands its usage in demanding power handling systems.

Additional specifications include a typical gate charge of 110nC at Vgs, maximum gate-source voltage of 20V, and forward voltage of 1.5V. The MOSFET is built with three pins and is part of the advanced IXYS HiperFET Polar series, which is well-regarded for robust design and high reliability in power conversion circuits.

This device is ideal for industrial power management, laboratory instrumentation, automation, renewable energy converters, high-efficiency motor control, and commercial equipment. Its construction and features make it a dependable solution for system designers looking for an N-channel MOSFET with strong electrical and thermal performance.

Explore more power semiconductor devices and industry-leading solutions from IXYS in the MOSFETs category on EnvMart.